AN EXPERIMENTAL STUDY ON PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES

Guo Kaizhou; Zhou Quan; Ma Jun; Yang Binzhou; Zhao Wei

Volume 17 Issue 4

Jul. 1995

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Article Navigation > Journal of Electronics & Information Technology > 1995 > 17(4): 421-425

Guo Kaizhou, Zhou Quan, Ma Jun, Yang Binzhou, Zhao Wei. AN EXPERIMENTAL STUDY ON PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES[J]. Journal of Electronics & Information Technology, 1995, 17(4): 421-425.

Citation:

Guo Kaizhou, Zhou Quan, Ma Jun, Yang Binzhou, Zhao Wei. AN EXPERIMENTAL STUDY ON PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES[J]. Journal of Electronics & Information Technology, 1995, 17(4): 421-425.

Guo Kaizhou, Zhou Quan, Ma Jun, Yang Binzhou, Zhao Wei. AN EXPERIMENTAL STUDY ON PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES[J]. Journal of Electronics & Information Technology, 1995, 17(4): 421-425.

Citation:

Guo Kaizhou, Zhou Quan, Ma Jun, Yang Binzhou, Zhao Wei. AN EXPERIMENTAL STUDY ON PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES[J]. Journal of Electronics & Information Technology, 1995, 17(4): 421-425.

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AN EXPERIMENTAL STUDY ON PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES

Received Date: 1993-11-22
Rev Recd Date: 1994-04-20
Publish Date: 1995-07-19

Abstract

Abstract

By using the apparatus given in this paper the experiment on photo-conductive switches was conducted to investigate the affection of both the laser energy and bias voltage on switch output. By means of the same set-up, the carrier lifetime of Cr: GaAs used was measured to be as 1.8ns, and the possibility of the set-up to be utilized as a high speed photodetector has been demonstrated.

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References(1)

References

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