INVESTIGATION OF PROBLEMS ABOUT THE LIGHT POWER OUTPUT OF GaAs/GaAlAs DH SURFACE EMITTING DIODES

E. G. Dierschke, L. E. Stone et al., Appl. Phys. Lett., 19(1971), 98.[2]Shigeki Horiuchi, Kenji Ikeda et al., IEEE Trans. on ED, ED-24 (1977), 986.[3]Shi,genenobu Yamakoshi, Osam Hasegawa et al., Appl. Phys. Lett., 31(1977), 627.[4]Osamu Oeda, Hajime Imai et al., J. Appl. Phys., 51(1980), 5316.[5]Osamu Ueda, Shaji Isozumi et al., ibid., 50(1979), 765.[6]黎锡强,孙炳玉,发光与显示,1983年,第1期,第53页.[7]Plenum Pree Handbook of High Temperature Materials, No 1, Materials Index by Peter T. B. Shaffer, Plenum Pree, New York,(1964).[8]Shaw Nan and Liu Yihuan, Scientia Sinica, 14(1965), 1582.[9]陈瑞璋等,光纤通讯,1980年,第2期,第53页.[10]W. G. Spitzer and J. M. Whelan, Phys. Rev., 114(1959), 59.[11]D. E. Hill, J. Appl. Phys., 36(1965), 3405.[12]潘慧珍等,电子学通讯,3(1980), 22.[13]J. A. Bragagnolo and L. C. Dinetta,J.Vac. Sci. Technol., 18(1981), 364.[14]A. M. Glass, Canada J.Phys., 43(1965), 12.[15]G. B. Stringfellow and P. E. Greene, J. Appl. Phys, 40(1969), 502.[16]G. P. Kekelidze, N. P. Kekelide et al., Defects and Radiation Effects in Semiconductors, Oiso, Japan, Sept(1980), 275.[17]T. Enod, Y. Nakanishi, et al., ibid, Sept(1980), 299.[18]R. A. Polimadei, S. Share et al., IEEE Trans. on NS, NS-21 (1974), 96.[19]J. T. Cox and G. Hass, Physics of Thin Films, Vol. 2, Academic Press, New York,(1964), 239-303.