Jin Sui-Geng. ENUMERATING ALL HAMILTONIAN CYCLES IN SOME GRAPHS BY USING THE GENERALIZED FIBONACCI SEQUENCE AND ITS PRODUCTION RULE[J]. Journal of Electronics & Information Technology, 1983, 5(3): 147-154.
Citation:
Yu Yuehui, Zhu Nanchang, Zou Shichang, Zhou Zhuying, Zhao Guoqing. NON-DESTRUCTIVE CHARACTERIZATION OF MeV ION IMPLANTED SILICON[J]. Journal of Electronics & Information Technology, 1996, 18(1): 104-108.
Jin Sui-Geng. ENUMERATING ALL HAMILTONIAN CYCLES IN SOME GRAPHS BY USING THE GENERALIZED FIBONACCI SEQUENCE AND ITS PRODUCTION RULE[J]. Journal of Electronics & Information Technology, 1983, 5(3): 147-154.
Citation:
Yu Yuehui, Zhu Nanchang, Zou Shichang, Zhou Zhuying, Zhao Guoqing. NON-DESTRUCTIVE CHARACTERIZATION OF MeV ION IMPLANTED SILICON[J]. Journal of Electronics & Information Technology, 1996, 18(1): 104-108.
Boron ions have been implanted into Si at an incident energy of 3MeV to a dose of 51015cm-2. Buried conductive layers are formed in Si substrate after annealing at 1050℃ for 20s. Annealing characteristics of damage has been examined by double-crystal X-ray diffraction. By detailed theoretical analysis of character of high energy ion implantation and optical response of free-carrier plasma effects, electrical activaton of implanted boron ions has been investigated by computer simulation of the IR reflection interference spectra.
Jin Sui-Geng. ENUMERATING ALL HAMILTONIAN CYCLES IN SOME GRAPHS BY USING THE GENERALIZED FIBONACCI SEQUENCE AND ITS PRODUCTION RULE[J]. Journal of Electronics & Information Technology, 1983, 5(3): 147-154.
Jin Sui-Geng. ENUMERATING ALL HAMILTONIAN CYCLES IN SOME GRAPHS BY USING THE GENERALIZED FIBONACCI SEQUENCE AND ITS PRODUCTION RULE[J]. Journal of Electronics & Information Technology, 1983, 5(3): 147-154.
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