STUDY OF 1.3m InGaAsP/InP DOUBLE HETEROJUNCTION LIGHT EMITTING DIODES

InGaAsP/InP double heterostructure material was grown by liquid phase epitaxial technique and Burrus type light emitting diodes were made from it. The output power is 1 m W at 100mA driving current. The emission wavelength is 1.3 m and the operating time has reached 3 103 hours.The I-V, I-P charaeteristics and the emission spectrum of the light emitting diodes are discussed. And it is pointed out that the structure of the device and the fabrieation technique do have influence upon the characteristics of the light emitting diodes,and the emission spectra of certain light emitting diodes have two peaks, it is due to the p-n junction displacement.