SEVERAL PROPERTIES OF Ti IN SILICON

Zeng Shurong; Lu Yongling; Fu Chunyin

Volume 9 Issue 2

Mar. 1987

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Zeng Shurong, Lu Yongling, Fu Chunyin. SEVERAL PROPERTIES OF Ti IN SILICON[J]. Journal of Electronics & Information Technology, 1987, 9(2): 149-155.

Citation:

Zeng Shurong, Lu Yongling, Fu Chunyin. SEVERAL PROPERTIES OF Ti IN SILICON[J]. Journal of Electronics & Information Technology, 1987, 9(2): 149-155.

Zeng Shurong, Lu Yongling, Fu Chunyin. SEVERAL PROPERTIES OF Ti IN SILICON[J]. Journal of Electronics & Information Technology, 1987, 9(2): 149-155.

Citation:

Zeng Shurong, Lu Yongling, Fu Chunyin. SEVERAL PROPERTIES OF Ti IN SILICON[J]. Journal of Electronics & Information Technology, 1987, 9(2): 149-155.

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SEVERAL PROPERTIES OF Ti IN SILICON

Received Date: 1985-02-15
Rev Recd Date: 1985-06-24
Publish Date: 1987-03-19

Abstract

Abstract

Some results in investigating deep levels in Ti-doped silicon are given. Three Ti associated deep levels are found by DLTS. They are two electron trap levels located at Ec- 0.23 eV and Ec - 0.53eV respectively in Ti-doped n-silicon and a hole trap level located at Ev +0.32eVin Ti-doped p-silicon. In order to study these levels further, the method of transient capacitance at constant temperature is used, and the thermal activation energy and capture cross-section in the range of experimental temperature and other related parameters are obtained. According to our experimental results, a brief discussion on the bonding feature of these levels and on their pinning to which band is given.

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References(1)

References

W. Fahrner, et al., Appl. Phys. Lett., 21(1972), 329.[2]M. Schultz, Appl. Phys., 4(1974), 225.[3]J. W. Chen, et al., Solid-State Electron., 22(1979), 810.[4]A. M. Salama, et al., J. Elcctrochem. Soc., 127(1980), 1164.[5]L. C. Kimerling, et al., Defects and Radiation Effects in Semiconductors, 1980, p217. [6] J. R. Morante, et al., Solid-State Electron., 26(1983), 1.[6]D. Stievenard, et al., J. Appl. Phys., 55(1984), 1477.[7]傅春寅等, 物理学报(待发表).[8]秦国刚等,中国科学(A辑),27(1984), 432.

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