METALLURGICAL AND ELECTRICAL CHARACTERISTICS OF p-InP/TiPdAu SYSTEMS

Zhang Gui-Cheng; Shui Hai-Long

Volume 6 Issue 2

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Article Navigation > Journal of Electronics & Information Technology > 1984 > 6(2): 172-175

Zhang Gui-Cheng, Shui Hai-Long. METALLURGICAL AND ELECTRICAL CHARACTERISTICS OF p-InP/TiPdAu SYSTEMS[J]. Journal of Electronics & Information Technology, 1984, 6(2): 172-175.

Citation:

Zhang Gui-Cheng, Shui Hai-Long. METALLURGICAL AND ELECTRICAL CHARACTERISTICS OF p-InP/TiPdAu SYSTEMS[J]. Journal of Electronics & Information Technology, 1984, 6(2): 172-175.

Zhang Gui-Cheng, Shui Hai-Long. METALLURGICAL AND ELECTRICAL CHARACTERISTICS OF p-InP/TiPdAu SYSTEMS[J]. Journal of Electronics & Information Technology, 1984, 6(2): 172-175.

Citation:

Zhang Gui-Cheng, Shui Hai-Long. METALLURGICAL AND ELECTRICAL CHARACTERISTICS OF p-InP/TiPdAu SYSTEMS[J]. Journal of Electronics & Information Technology, 1984, 6(2): 172-175.

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METALLURGICAL AND ELECTRICAL CHARACTERISTICS OF p-InP/TiPdAu SYSTEMS

Received Date: 1982-02-13
Rev Recd Date: 1983-04-18
Publish Date: 1984-03-19

Abstract

Abstract

The interdiffusion of p-InP/TiPdAu at interface has been investigated by Auger electron spectroscopy (AES). The surface morphology of heat treatment samples are observed. The specific contact resistance as a function of heat treatment temperatures for the p-InP/ TiPdAu systems is also given.It is found that the interdiffusion of Au, In, P occurs during the heat treatment of p-InP/TiPdAu. The Pd layer as a diffusion barrier plays an important role. The interdiffusion, morphology and specific contact resistance for heat treatment samples of p-InP/TiPdau have interconnection and strong dependence on each other. The TiPdAu layers are used as p-electrodes for InGaAsP/InP double heterojunction light emitting diodes. The p-electrode has good stability.

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References(1)

References

E. H. Okelek et al., Solid-state Electronics, 24(1981),[2]G. Y. Robinson, Thin solid films, 72(1980), 129.[3]E. Kuphal, Solid-state Electronics, 24(1981), 69.[4]L. P. Erickson; Thin Sold Films, 64(1979), 421.[5]C. J. Jones et al.,J. Phys. D: Appl. Phys., 12(1979),941.[7]K.Fujiwara, Appl. Phys. Lett., 35(1979), 861.[8]水海龙等,半导体光电,1981年,第2期,第192页.[9]水海龙等,电子学通讯,4(1982), 286.[10]张桂成等,发光与显示,2(1982), 65.

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