THE STUDY OF THE MICROWAVE CHARACTERICTICS OF THE HIGH SPEED SEMICONDUCTOR LASER DIODE

This paper presents a deep researching of the microwave characteristics of a quantum well laser diode with the diode s microwave S parameters. By considering the characteristics and microwave packing effects of the device, a microwave equivalent circuit of the semiconductor quantum well laser and the numerical analogous methods for it are proposed. By devoloping a proper object function and selecting a correct calculation method, the element parameters of the circuit are succesfully simulated under the measured microwave S11 parameters. By comparing the calculated results and the measured ones, it shows that presented equivalent circuit is correct and the calculation method is effective.