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Volume 13 Issue 6
Nov.  1991
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Guo Kangjin Du Gendi Wu Zheng. STUDY OF THE ANODIZATION OF Al FILM ON InP SUBSTRATE AND ITS PROPERTIES[J]. Journal of Electronics & Information Technology, 1991, 13(6): 611-617.
Citation: Guo Kangjin Du Gendi Wu Zheng. STUDY OF THE ANODIZATION OF Al FILM ON InP SUBSTRATE AND ITS PROPERTIES[J]. Journal of Electronics & Information Technology, 1991, 13(6): 611-617.

STUDY OF THE ANODIZATION OF Al FILM ON InP SUBSTRATE AND ITS PROPERTIES

  • Received Date: 1990-07-03
  • Rev Recd Date: 1991-04-28
  • Publish Date: 1991-11-19
  • The anodization of Al film on InP substrate and the properties of anodic Al2O3/lnP have been investigated by AES, DLTS, I-V, C-V and ellipsometer. The results show that the anodic oxide Al2O3 has the permitivity of 11-12 and the resistivity of 1.31013 ohm-cm. Interface state density at Al2O3/InP is about 1011cm-2eV-1. DLTS reveals that there is continuously-distributed interface electron traps at Al2O3/lnP interface. Anodic oxide Al2O3 exhibits good stability and electrical properties and could be used for passivation, diffusion mask and gate insulator etc.
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