A POROUS TUNGSTEN CESIUM ION SOURCE

Zhao Shouzhen; Zhou Qing; Jiang Yongfeng

Volume 12 Issue 4

Jul. 1990

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Article Navigation > Journal of Electronics & Information Technology > 1990 > 12(4): 446-448

Zhao Shouzhen, Zhou Qing, Jiang Yongfeng. A POROUS TUNGSTEN CESIUM ION SOURCE[J]. Journal of Electronics & Information Technology, 1990, 12(4): 446-448.

Citation:

Zhao Shouzhen, Zhou Qing, Jiang Yongfeng. A POROUS TUNGSTEN CESIUM ION SOURCE[J]. Journal of Electronics & Information Technology, 1990, 12(4): 446-448.

Zhao Shouzhen, Zhou Qing, Jiang Yongfeng. A POROUS TUNGSTEN CESIUM ION SOURCE[J]. Journal of Electronics & Information Technology, 1990, 12(4): 446-448.

Citation:

Zhao Shouzhen, Zhou Qing, Jiang Yongfeng. A POROUS TUNGSTEN CESIUM ION SOURCE[J]. Journal of Electronics & Information Technology, 1990, 12(4): 446-448.

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A POROUS TUNGSTEN CESIUM ION SOURCE

Received Date: 1988-07-25
Rev Recd Date: 1900-01-01
Publish Date: 1990-07-19

Abstract

Abstract

In the surface analysis and the manufacture of photocathode the cesium ion source shows some advantages as compared with the neutral cesium source. According to the principle of surface ionization, a cesium ion source is manufactured with porous tungsten and cesium chromate. A tablet of porous tungsten and a nickel tube are welded by a laser beam. The ion source is heated to about 1000K io terms of an indirect heating oven and its experimental results are given.

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References(1)

References

张华顺,离子束源和大功率中性束源,原子能出版社,1987年,第二章,第五节.[2]吴兆皓,电子科学学刊,8(1986) 6,442-448.[3]D. L. Schaefer, Rev. Sci. Instrum., 41(1970)2,274-275.[4]赵守珍等,真空科学与技术,9(1989)3，203-204.[5]李昌全等,真空技术,5(1976)2,40-52.

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