In this paper, a new calculation method of multienergy implantation i.e., eqivalent area method has been proposed. According to the requirement for designing the specific device, a variety of concentration and implantation energy profile which can be arbitrarily supposed may be obtained by this method. Hence, it is possible to make the thin layer device which has a plane concentration profile.Using this method, the Si-EAPD device which has a rectangular on low-high-low concentration profile and the GaAs-MESFET or Si-IMPATT device which has a horsehead shape concentration profile have been designed and calculated. The calculated results are very satisfying. The prospect of the use of designing new-type device is predicted. The calculated results in this paper coicide with the experimental ones given by R.H.Benhard(1977).
罗晋生,离子注入物理,1979, P. 522.[2]H. Kanbe and T. Kimura, IEEE Trans. on ED, ED-23(1976), 1337.[3]T. Kaneda, et al.,J.Appl. Phys., 47(1976), 3135.[4]王渭源等,半导体学报,3(1982)., 493.[5]H. Mish, et al., Fujitsu Sci. and Tech. J., 11(1975)4, 113.[6]王德宁等,物理学报,29(1980), 1452.[7]王渭源等,科技通讯,1982年,第3期,第90页.[8]R. H. Benhard, Solid-State Electron., 20(1977)4, 291.
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