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Volume 20 Issue 2
Mar.  1998
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Qin Ming, Huang Qingan, Wei Tongli. FABRICATION AND CHARACTERISTICS OF FIELD EMISSION ARRAYS[J]. Journal of Electronics & Information Technology, 1998, 20(2): 281-284.
Citation: Qin Ming, Huang Qingan, Wei Tongli. FABRICATION AND CHARACTERISTICS OF FIELD EMISSION ARRAYS[J]. Journal of Electronics & Information Technology, 1998, 20(2): 281-284.

FABRICATION AND CHARACTERISTICS OF FIELD EMISSION ARRAYS

  • Received Date: 1996-10-30
  • Rev Recd Date: 1997-03-10
  • Publish Date: 1998-03-19
  • Field emission arrays are important to vacuum microelectronic microwave devices. The downward pyramid filled cone and upward etched silicon cone are fabricated. Two kinds of packing structures are used and the emission properties of these cones are tested. The characteristics of these structures and the application for microwave devices are analyzed.
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  • Kosmahl H G. A wide-band with high-gain small-size distributed amplifier with field-emission triodes (FE TR10DEs) for the 10 to 300 GHz frequency range[J].IEEE Trans. on ED.1989, 36(10):2728-2737[2]Spindt C A. Field-emitter-array development for high-frequency operation. J. Vac. Sci. Technol., 1993, B11(2): 468-473.[3]Qing-An Huang, Tao Xiang, Ming Qin. Improvement of frequency performance of gated-emitter by air bridge method. Proc. 7th Int. Vacuum Microelectronics Conf., France: 1994, 281-285.[4]黄庆安.Spindt型真空微三极管按比例缩小的CE规则.电子学报,1995, 23(2): 85-86.[5]Qing-An Huang, Ming Qin, Tao Xiang, et al. Silicon wafer bonding for sealed vacuum micro-electronic device. Proc. 8th Int. Vacuum Microelectronics conf., USA: 1995, 154-157.[6]Qingyi Tong, Huizhen Zhang, Ming Qin. Void elimination by lateral gap diffusion in silicon direct bonding (SDB) technology[J].Electron. Lett.1991, 27(3):288-289[7]Busta H H, Pogemiller J E, Chan W. Experimental and theoretical determinations of gate-to-emitter stray capacitance of field emitters[J].J. Vac. Sci. Technol. B.1993, 11(2):445-452
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