THE DEVELOPMENT OF a-Si:H IMAGE PICKUP TUBES WITH HIGH PHOTOSENSITIVITY

Hai Yuhan; Zhou Zhongyi; Zhang Baochui

Volume 10 Issue 6

Nov. 1988

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Hai Yuhan, Zhou Zhongyi, Zhang Baochui. THE DEVELOPMENT OF a-Si:H IMAGE PICKUP TUBES WITH HIGH PHOTOSENSITIVITY[J]. Journal of Electronics & Information Technology, 1988, 10(6): 528-535.

Citation:

Hai Yuhan, Zhou Zhongyi, Zhang Baochui. THE DEVELOPMENT OF a-Si:H IMAGE PICKUP TUBES WITH HIGH PHOTOSENSITIVITY[J]. Journal of Electronics & Information Technology, 1988, 10(6): 528-535.

Hai Yuhan, Zhou Zhongyi, Zhang Baochui. THE DEVELOPMENT OF a-Si:H IMAGE PICKUP TUBES WITH HIGH PHOTOSENSITIVITY[J]. Journal of Electronics & Information Technology, 1988, 10(6): 528-535.

Citation:

Hai Yuhan, Zhou Zhongyi, Zhang Baochui. THE DEVELOPMENT OF a-Si:H IMAGE PICKUP TUBES WITH HIGH PHOTOSENSITIVITY[J]. Journal of Electronics & Information Technology, 1988, 10(6): 528-535.

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THE DEVELOPMENT OF a-Si:H IMAGE PICKUP TUBES WITH HIGH PHOTOSENSITIVITY

Received Date: 1987-01-13
Rev Recd Date: 1987-09-02
Publish Date: 1988-11-19

Abstract

Abstract

a-Si:H vidicon targets based on the blocking structure have been deposited and investigated. The target current-voltage characteristics in dark and under illumination are measured. The photosensitivity is 2400 uA/lm. The spectral sensitivity is high over the whole visible range. The peak photoconductive gain is close to 0.8 at around 5800 A wavelength. The signal current increases linearly with light intensity, r is about 0.95. The dark current is about 1-3 nA at operating target voltage. The limiting resol...

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References(1)

References

海宇涵,周忠毅等,关于开展非晶硅靶摄象管的探索性研究的报告,中国科学院电子学研究所内部资料,1979年.[2]科学报，1985年3月17日,第1版.[3]阿高三郎ほか,日经エレクトロニクス,1979,No. 223, p. 52.[4]Y. Imamura et al., Appl. Phys. Lett, 35(1979), 349.[5]I. Shimuzu et al., J. Appl. Phys., 51(1980), 6422.[6]S. Oda, et al., J. Appl. Phys., 52(1981), 7275.[7]S. Ishioka, et al., Jpn J. Appl. Phys., Suppl., 22-1(1983), 461.[8]C. Kusano, et al., New Imaging Device Using a-Si, Int. ED Meeting, 1983, p509.[9]E. J. Kampas, J. Appl. Phys., 53(1982), 6408.[10]海宇涵,周忠毅,真空科学与技术,5(1985),51.[11]海宇涵,周忠毅,电子科学学刊,7(1985),108.[12]S. Ishioak, Semiconductors and Semimetals, vol. 21 Part D, p75.[13]A. Moore, Appl. Phys. Lett., 31(1977), 762.[14]D. Staebler, IEEE Trans. on R., R-31(1982), 281.

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