A HIGH STABLE LONG LIFE-SPAN REFLACTIVE GaAs(Cs, F) PHOTOCATHODE

Tan Kaisheng

Volume 9 Issue 2

Mar. 1987

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Article Navigation > Journal of Electronics & Information Technology > 1987 > 9(2): 161-164

Tan Kaisheng. A HIGH STABLE LONG LIFE-SPAN REFLACTIVE GaAs(Cs, F) PHOTOCATHODE[J]. Journal of Electronics & Information Technology, 1987, 9(2): 161-164.

Citation:

Tan Kaisheng. A HIGH STABLE LONG LIFE-SPAN REFLACTIVE GaAs(Cs, F) PHOTOCATHODE[J]. Journal of Electronics & Information Technology, 1987, 9(2): 161-164.

Tan Kaisheng. A HIGH STABLE LONG LIFE-SPAN REFLACTIVE GaAs(Cs, F) PHOTOCATHODE[J]. Journal of Electronics & Information Technology, 1987, 9(2): 161-164.

Citation:

Tan Kaisheng. A HIGH STABLE LONG LIFE-SPAN REFLACTIVE GaAs(Cs, F) PHOTOCATHODE[J]. Journal of Electronics & Information Technology, 1987, 9(2): 161-164.

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A HIGH STABLE LONG LIFE-SPAN REFLACTIVE GaAs(Cs, F) PHOTOCATHODE

Tan Kaisheng

Received Date: 1985-03-27
Rev Recd Date: 1985-04-25
Publish Date: 1987-03-19

Abstract

Abstract

A Stable surface layer is essential for a high stable long life-span photocathode. Using fluorine instead of oxygen in activating the surface of GaAs substrate, the strong electronegativity of fluorine improved the stability of photocathode. The life-span of reflactive GaAs (Cs, F) photocathode has been up to 8500 hours. Furthermore, its technological reproducibility and anti-contamination ability are better than those of GaAs(Cs, O2) photocathode.

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References(1)

References

H. Schade, H. Nelson and H. Kressel, Appl. Phys. Lett.,20(1972), 385.[2]H. Kressel, H. Schade and H. Nelson, J. Lumin., 7(1973),146.[3]Hirofumi Kan, et al., Appl. Phys. Lett., 9(1979), 545.[4]Hirofumi Kan, et al., J. Appl. Phys., 6(1980), 3404.[5]E. I. Garwin, et al., Oxide effects on photoemisston from high current GaAs photocathodes. SLAG Pub. 2715, March 1981.[6]B. E. Evans, et al., Surface Sci., 11(1968). 1.[7]S. Gatde, Phys. Stat. Sol. (A), 2(1970), 497.[8]I. Shita, et al., J. Electrochem. Soc., 124(1977), 155.

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