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Volume 8 Issue 3
May  1986
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Sun Yuping, Liu Hua. MONTE CARLO SIMULATION OF THE ENERGY DISSIPATION PROFILES OF 30, 50 AND 100KeV INCIDENT BEAMS IN A LAYERED STRUCTURE IN ELECTRON BEAM LITHOGRAPHY[J]. Journal of Electronics & Information Technology, 1986, 8(3): 209-216.
Citation: Sun Yuping, Liu Hua. MONTE CARLO SIMULATION OF THE ENERGY DISSIPATION PROFILES OF 30, 50 AND 100KeV INCIDENT BEAMS IN A LAYERED STRUCTURE IN ELECTRON BEAM LITHOGRAPHY[J]. Journal of Electronics & Information Technology, 1986, 8(3): 209-216.

MONTE CARLO SIMULATION OF THE ENERGY DISSIPATION PROFILES OF 30, 50 AND 100KeV INCIDENT BEAMS IN A LAYERED STRUCTURE IN ELECTRON BEAM LITHOGRAPHY

  • Received Date: 1984-09-19
  • Rev Recd Date: 1985-12-05
  • Publish Date: 1986-05-19
  • In this paper, a Monte Carlo simulation of the energy dissipation profiles of 30, 50 and 100 keV incident beams in this film (0.4 m) electon resist, polymethyl methacrylate (PMMA), on thick silicon substrate in electron beam lithography is preaented. The radial scattering and energy loss of incident electrons (including backscattered electrons from the substrate) are simulated under illumination of ideal point source and Ganssiah round beam spot source, and the histories of 30000-50000 electrons are computed.
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  • 孙毓平,物理,14(1985), 748.[2]T. H. P. Chang,J.Vac. Sci. Technol., 12(1975), 1271.[3]M. Parikh, ibid., 15(1978), 931.[4]M. Hatzakis, Solid State Technol., 24(1981), 74.[5]D. F. Kyser and C. H. Ting,J.Vac. Sci. Technol., 16(1979), 1759.[6]A. Chapiro, Radiation Chemistry of Polymeric Systems, vol. 15, Wiley, New York, 1962, p. 495.[7]R. W. Nosker, J. Appl. Phys., 40(1969), 1872.[8]R. J. Hawryluk and H. i. Smith, Proc. 5th Int. Conf. on Electron and Ion Beam Science and Technology, edited by R. Bakish, Electrochemical Society, Princeton, N. J., 1972, p. 51.[9]J. S. Greeneich and T. Van Duzer, IEEE, Trans. on ED, ED-21(1974), 286.[10]M. J. Berger, Method in Computational Physics, I, Academic Press, 1963, p. 135.[11]D. F. Kyser and K. Murata, Proc. 6th Int. Conf. on Electron and Ion Beam Science and Technology, edited by R. Bakish, Electrochemical Society, Princeton, N. J., 1974, p. 205.[12]R. J. Hawryluk, et al.,J.Appl. Phys.,45(1974), 2551.[13]R. Shimizu, et al., ibid., 46(1975), 1581.[14]D. F. Kyser, J. Vac. Sci. Technol., B, 1(1983).1391.[15]D. C. Toy, Microelectronic Engineering, 1(1983), 103.[16]M. Yoshimi, et al., Proc. 14th Conf. Solid State Devices, Tokyo, 1982. see alsoJpn J. Appl.Phys., 22 (1983) Suppl. 22-1, 179.[17]L. C. Haggmark, et al., Trans. Amer. Nuc.Soc., 19(1974), 471.[18]H. E. Bishop, Proc. Phys. Soc., Jpn, 85(1965),855.[19]F. Rchrlich and B. C. Carlson, Phys. Rev., 93(1954), 38.[20]R. M. Sternheimer, ibid., 145(1966), 247.[21]S. Goudsmit and J. Saundersen, ibid., 57(1940), 24.[22]K. Murata, et al., J. Appl. Phys., 52(1981), 4396.[23]H. C. Pfeiffer, Proc. 5th Annual SEM Symp. IIT, Research Inst., (1972) p. 113.[24]A. V. Crewe, Optik, 52(1978/79), 337.[25]T. Takigawa, et al., Microelectronic Engineering, 1(1983), 121.[26]P. J. Coane et al., Proc. 10th Int. Conf. on Electron and Ion Beam Science and Technology,edited by R. Bakish, Electro chemical Society, Princeton, N. J., 1983, p. 2.[27]H. I. Ralph et al., ibid., p. 219.[28]孙毓平,电子科学学刊,7(1985), 304.
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