Tan Changhua, Xu Mingzhen, Li Shudong. MOS CONSTANT CURRENT QUASISTATIC SMALL-SIGNAL TECHNIQUE FOR DETERMINATION OF LOW INTERFACE STATE DISTRIBUTION OF Si/SiO2 SYSTEM[J]. Journal of Electronics & Information Technology, 1986, 8(4): 272-278.
Citation:
Tan Changhua, Xu Mingzhen, Li Shudong. MOS CONSTANT CURRENT QUASISTATIC SMALL-SIGNAL TECHNIQUE FOR DETERMINATION OF LOW INTERFACE STATE DISTRIBUTION OF Si/SiO2 SYSTEM[J]. Journal of Electronics & Information Technology, 1986, 8(4): 272-278.
Tan Changhua, Xu Mingzhen, Li Shudong. MOS CONSTANT CURRENT QUASISTATIC SMALL-SIGNAL TECHNIQUE FOR DETERMINATION OF LOW INTERFACE STATE DISTRIBUTION OF Si/SiO2 SYSTEM[J]. Journal of Electronics & Information Technology, 1986, 8(4): 272-278.
Citation:
Tan Changhua, Xu Mingzhen, Li Shudong. MOS CONSTANT CURRENT QUASISTATIC SMALL-SIGNAL TECHNIQUE FOR DETERMINATION OF LOW INTERFACE STATE DISTRIBUTION OF Si/SiO2 SYSTEM[J]. Journal of Electronics & Information Technology, 1986, 8(4): 272-278.
A new technique called MOS constan t current quasistatic small-signal technique is given. Using this technique the quasistatic capacitance, high frequency capaeitanee and semiconductor surface potential of MOS capacitor can be measured simultaneously, and the low interface state distribution of Si/SiO2 system can also be rapidly and accurately determined. Due to the use of synchronous differential amplification technique with limited amplitude, the sensitivity of the new technique in measuring the interface state density is raised about an order of magnitude.
M. Kuhn, Solid-State Elect., 13(1970), 837.[2]R. Castagne and A. Vaipaille, Surf. Sci., 28(1971), 157.[3]A. Goetzberger, E. Klasrnann, M. J. Schuz, CRC Critical Reviews in Solid-State Sci., 7(1976), 9.[4]C. N. Berlund, IEEE Trans. on ED, ED-13(1966), 701.
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