RAPID DETERMINATION OF LONG GENERATION LIFETIME

Ding Koubao; Zhang Xiumiao

Volume 20 Issue 5

Sep. 1998

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Article Navigation > Journal of Electronics & Information Technology > 1998 > 20(5): 712-715

Ding Koubao, Zhang Xiumiao. RAPID DETERMINATION OF LONG GENERATION LIFETIME[J]. Journal of Electronics & Information Technology, 1998, 20(5): 712-715.

Citation:

Ding Koubao, Zhang Xiumiao. RAPID DETERMINATION OF LONG GENERATION LIFETIME[J]. Journal of Electronics & Information Technology, 1998, 20(5): 712-715.

Ding Koubao, Zhang Xiumiao. RAPID DETERMINATION OF LONG GENERATION LIFETIME[J]. Journal of Electronics & Information Technology, 1998, 20(5): 712-715.

Citation:

Ding Koubao, Zhang Xiumiao. RAPID DETERMINATION OF LONG GENERATION LIFETIME[J]. Journal of Electronics & Information Technology, 1998, 20(5): 712-715.

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RAPID DETERMINATION OF LONG GENERATION LIFETIME

Received Date: 1997-07-03
Rev Recd Date: 1997-12-29
Publish Date: 1998-09-19

Abstract

Abstract

A method for rapidly determining long generation lifetime under linear voltage sweep was presented. The C-t transient curve needs not to reach saturation. The data processing is simple. Furthermore, it needs not to know the sample s impurity density.

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References(1)

References

Pierret R F. A linear-sweep MOS-C technique for determining minority carrier lifetimes. IEEE Trans. on Electron Devices, 1972, ED-19(7): 869-873.[2]包宗明,苏九令.MOs电容法调硅的产生寿命和表面产生速度.物理学报,1980, 29(6): 693-697.[3]张秀森.饱和电容法快速确定体产生寿命和表面产生速度.半导体学报,1982, 3(2): 102-106.[4]张秀淼,丁扣宝.一种可用于直接计算产生寿命的产生区宽度模型.电子学报,1993,21(5): 43-46.

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