STUDY ON THE DYNAMIC I-V CHARACTERISTICS OF BNRT

Zhou Xuan; Gao Guanghe

Volume 13 Issue 3

May 1991

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Article Navigation > Journal of Electronics & Information Technology > 1991 > 13(3): 327-331

Zhou Xuan, Gao Guanghe. STUDY ON THE DYNAMIC I-V CHARACTERISTICS OF BNRT[J]. Journal of Electronics & Information Technology, 1991, 13(3): 327-331.

Citation:

Zhou Xuan, Gao Guanghe. STUDY ON THE DYNAMIC I-V CHARACTERISTICS OF BNRT[J]. Journal of Electronics & Information Technology, 1991, 13(3): 327-331.

Zhou Xuan, Gao Guanghe. STUDY ON THE DYNAMIC I-V CHARACTERISTICS OF BNRT[J]. Journal of Electronics & Information Technology, 1991, 13(3): 327-331.

Citation:

Zhou Xuan, Gao Guanghe. STUDY ON THE DYNAMIC I-V CHARACTERISTICS OF BNRT[J]. Journal of Electronics & Information Technology, 1991, 13(3): 327-331.

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STUDY ON THE DYNAMIC I-V CHARACTERISTICS OF BNRT

Zhou Xuan^{①;高广和},
Gao Guanghe

Received Date: 1989-07-29
Rev Recd Date: 1990-05-16
Publish Date: 1991-05-19

Abstract

Abstract

Experimental investigation was carried out for the dynamic I-V characteris-tics of the bidirectional negative resistance transistor (BNRT) in the relaxation oscillation circuit. Some properties of the BNRT relaxation oscillation circuit were also analysed by means of the dynamic I-V characteristics. Experimental results agree with the computations. The direction for improving the device design is also pointed out in order to enhance the oscillation frequency.

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References(1)

References

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