Wang Maoxiang, Wu Zonghan, Sun Chengxiu, Zhang Jigao. THE NEGATIVE RESISTANCE PHENOMENON IN THE I-V CURVE WITH DOUBLE BARRIER LIGHT EMISSION TUNNEL JUNCTIONS[J]. Journal of Electronics & Information Technology, 2000, 22(3): 492-495.
Citation:
Wang Maoxiang, Wu Zonghan, Sun Chengxiu, Zhang Jigao. THE NEGATIVE RESISTANCE PHENOMENON IN THE I-V CURVE WITH DOUBLE BARRIER LIGHT EMISSION TUNNEL JUNCTIONS[J]. Journal of Electronics & Information Technology, 2000, 22(3): 492-495.
Wang Maoxiang, Wu Zonghan, Sun Chengxiu, Zhang Jigao. THE NEGATIVE RESISTANCE PHENOMENON IN THE I-V CURVE WITH DOUBLE BARRIER LIGHT EMISSION TUNNEL JUNCTIONS[J]. Journal of Electronics & Information Technology, 2000, 22(3): 492-495.
Citation:
Wang Maoxiang, Wu Zonghan, Sun Chengxiu, Zhang Jigao. THE NEGATIVE RESISTANCE PHENOMENON IN THE I-V CURVE WITH DOUBLE BARRIER LIGHT EMISSION TUNNEL JUNCTIONS[J]. Journal of Electronics & Information Technology, 2000, 22(3): 492-495.
The double-barrier light emission tunnel junctions have been fabricated. The characteristics of electronic resonant tunneling with the junctions have been analyzed. In connection with the electronic resonant tunneling and light emission mechanism of the junction, the negative resistance phenomenon (NRP) in the I-V curve and the relation between NRP and Surface Plasmon Polariton(SPP) have been studied especially.
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