Zheng Jiang, Lin Ci Men, Jiangshen, Wei Tongli, Wei Yu. C-V AND I-V CHARACTERISTICS OF ULTRATHIN METAL/LB INSULATING FILMS/SEMICONDUCTOR STRUCTURE[J]. Journal of Electronics & Information Technology, 1990, 12(4): 415-417.
Citation:
Zheng Jiang, Lin Ci Men, Jiangshen, Wei Tongli, Wei Yu. C-V AND I-V CHARACTERISTICS OF ULTRATHIN METAL/LB INSULATING FILMS/SEMICONDUCTOR STRUCTURE[J]. Journal of Electronics & Information Technology, 1990, 12(4): 415-417.
Zheng Jiang, Lin Ci Men, Jiangshen, Wei Tongli, Wei Yu. C-V AND I-V CHARACTERISTICS OF ULTRATHIN METAL/LB INSULATING FILMS/SEMICONDUCTOR STRUCTURE[J]. Journal of Electronics & Information Technology, 1990, 12(4): 415-417.
Citation:
Zheng Jiang, Lin Ci Men, Jiangshen, Wei Tongli, Wei Yu. C-V AND I-V CHARACTERISTICS OF ULTRATHIN METAL/LB INSULATING FILMS/SEMICONDUCTOR STRUCTURE[J]. Journal of Electronics & Information Technology, 1990, 12(4): 415-417.
C-V and I-V characteristics of ultratllin metal/LB insulating films/semiconductor structure are studied. Theoretical analysis are well in accord with experimental results. The results indicate that: (1) Ultrathin MLS structure has normal C-V and I-V characteristics; (2) It is possible to modify the barrier height of Schottky devices by using LB thin films as insulators.
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