A STUDY OF Zn DIFFUSION IN InP AT LOW TEMPERATURE

Zhang  Gui-Cheng; Xu  Shao-Hua; Shui  Hai-Long

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Zhang Gui-Cheng, Xu Shao-Hua, Shui Hai-Long. A STUDY OF Zn DIFFUSION IN InP AT LOW TEMPERATURE[J]. Journal of Electronics & Information Technology, 1983, 5(2): 95-99.

Citation:

Zhang Gui-Cheng, Xu Shao-Hua, Shui Hai-Long. A STUDY OF Zn DIFFUSION IN InP AT LOW TEMPERATURE[J]. Journal of Electronics & Information Technology, 1983, 5(2): 95-99.

Zhang Gui-Cheng, Xu Shao-Hua, Shui Hai-Long. A STUDY OF Zn DIFFUSION IN InP AT LOW TEMPERATURE[J]. Journal of Electronics & Information Technology, 1983, 5(2): 95-99.

Citation:

Zhang Gui-Cheng, Xu Shao-Hua, Shui Hai-Long. A STUDY OF Zn DIFFUSION IN InP AT LOW TEMPERATURE[J]. Journal of Electronics & Information Technology, 1983, 5(2): 95-99.

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A STUDY OF Zn DIFFUSION IN InP AT LOW TEMPERATURE

Received Date: 1981-07-08
Publish Date: 1983-03-19

Abstract

Abstract

In this report the diffusion of Zn in InP at low temperature is investigated. The experiment is accomplished in an evacuated and sealed quartz ampoule using Zn3P2 as the source of Zn.The electrical characteristics of the samples obtained by the isotemperature process and the two-temperature process are compared. It is found that the two-temperature process may obtain a smooth, no damage and high-concentration surface layer. This process has been applied to fabricate InGaAsP/InP light emitting diodes, and the diodes obtained have an output power of about 1mW with a series resistance of 23. the behaviors of Zn diffusion in InP are discussed, and the anomalous phenomena in isotemperature diffusion at 550℃ are explained.

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References(1)

References

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