STUDY OF MORPHOLOGICAL DISTRIBUTION OF DEFECTS IN GaAs WAFERS BY INFRARED DIGITAL IMAGE PROCESSING

Zhang Fugui

Volume 10 Issue 6

Nov. 1988

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Zhang Fugui. STUDY OF MORPHOLOGICAL DISTRIBUTION OF DEFECTS IN GaAs WAFERS BY INFRARED DIGITAL IMAGE PROCESSING[J]. Journal of Electronics & Information Technology, 1988, 10(6): 563-567.

Citation:

Zhang Fugui. STUDY OF MORPHOLOGICAL DISTRIBUTION OF DEFECTS IN GaAs WAFERS BY INFRARED DIGITAL IMAGE PROCESSING[J]. Journal of Electronics & Information Technology, 1988, 10(6): 563-567.

Zhang Fugui. STUDY OF MORPHOLOGICAL DISTRIBUTION OF DEFECTS IN GaAs WAFERS BY INFRARED DIGITAL IMAGE PROCESSING[J]. Journal of Electronics & Information Technology, 1988, 10(6): 563-567.

Citation:

Zhang Fugui. STUDY OF MORPHOLOGICAL DISTRIBUTION OF DEFECTS IN GaAs WAFERS BY INFRARED DIGITAL IMAGE PROCESSING[J]. Journal of Electronics & Information Technology, 1988, 10(6): 563-567.

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STUDY OF MORPHOLOGICAL DISTRIBUTION OF DEFECTS IN GaAs WAFERS BY INFRARED DIGITAL IMAGE PROCESSING

Zhang Fugui

Received Date: 1986-12-17
Rev Recd Date: 1988-06-05
Publish Date: 1988-11-19

Abstract

Abstract

A new method is applied to characterize the defects in GaAs material (e.g. the absorption of EL2 centres). The method consists of transmitting a laser beam (=1.1-1.5 m) through the GaAs wafer of 4-8 mm thickness and 50 mm diameter. The image is received by the TOSHIBA 8844 camera and entered into the DATASUD computer image processing system. This image is displayed on a monitor permitting to observe the inhomogeneity (like cross, cells and volutes) of the EL2 and dislocation defects. This paper will introduce a specific image processing software for GaAs material, called ZHIMAG (ZHang IMAGe) and its applications in GaAs wafer. The software can be also applied to any other types of image processing.

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References(1)

References

Fugui Zhang, Morphologie des Distributions de Defauts Dans GaAs-SI par Imagerie Infra-Rouge Numerique,These de doctorat, Montpellier, France, 1986.[2]J. Logowski, et al., Semi-insulating III-V Materials, Conf., Kahneeta, U. S. A., 1984, 130-135.[3]N. Yoyoda, et al., Defect Recongnition and Image Processing in III-V Compounds, Conf., la Grande Motte, France, 1985, 30-34.M. P. Scott, Defect Recongnition and Image Processing in III-V Compounds, Conf., La Grande Motte, France, 1985, 89-86.B. Goutheraux, Les Mesures de Conductivite Electrique en Cartographie, These Paris VI, 1985, 120-140.M. Asgarinia, Letude Experimentals des Defauts Dans GaAs-SI, Repport DEA, Montpellier, France, 1985,50-56.[4]M.R.Brozel.[J].et al., Three Dimensional Image of the Distribution of 1m Absorpton in Undoped SI-LEC. GaAs and Related Compounds, Biareitz, France.1984,:-T. Kikuta, et al., Microscopic Distribution of Deep and Shallow Levels Around Dislocation in Uadopted SI-GaAs, GaAs and Related Compounds, Biareitz, France, 1984,72-76.

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