SIMULATION AND DESIGN OF DOUBLE-GATED FIELD EMISSION ARRAYS

Zhuang Xuezeng; Xia Shanhong; Tao Xinxin

Volume 20 Issue 1

Jan. 1998

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Article Navigation > Journal of Electronics & Information Technology > 1998 > 20(1): 114-119

Zhuang Xuezeng, Xia Shanhong, Tao Xinxin. SIMULATION AND DESIGN OF DOUBLE-GATED FIELD EMISSION ARRAYS[J]. Journal of Electronics & Information Technology, 1998, 20(1): 114-119.

Citation:

Zhuang Xuezeng, Xia Shanhong, Tao Xinxin. SIMULATION AND DESIGN OF DOUBLE-GATED FIELD EMISSION ARRAYS[J]. Journal of Electronics & Information Technology, 1998, 20(1): 114-119.

Zhuang Xuezeng, Xia Shanhong, Tao Xinxin. SIMULATION AND DESIGN OF DOUBLE-GATED FIELD EMISSION ARRAYS[J]. Journal of Electronics & Information Technology, 1998, 20(1): 114-119.

Citation:

Zhuang Xuezeng, Xia Shanhong, Tao Xinxin. SIMULATION AND DESIGN OF DOUBLE-GATED FIELD EMISSION ARRAYS[J]. Journal of Electronics & Information Technology, 1998, 20(1): 114-119.

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SIMULATION AND DESIGN OF DOUBLE-GATED FIELD EMISSION ARRAYS

Received Date: 1997-01-15
Rev Recd Date: 1997-04-25
Publish Date: 1998-01-19

Abstract

Abstract

One of the crucial technologies for developing high resolution field emitter displays and vacuum microelectronic devices in microwave and millimeter-wave bands is the design and fabrication of field emitter arrays which can provide with focused electron beam. After having a brief discussion of two kinds of double-gated field emission arrays (DGFEA), the concentric focusing (in plane gates) and the aperture focusing (2-tier gates), presented in the paper are the design and simulation methods of the aperture focusing DGFEA, and simulation results about its emission characteristics and focusing performance. It is believed from the results that the DGFEA can produce a pretty parallel electron beam, its maximum emission current density may exceed 300 A/cm2 and it meets the major requirements for developing microwave and millimeter-wave devices, and other strong beam devices.

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References(1)

References

庄学曾,夏善红,刘光治.真空微电子器件的进展和问题.电子科学学刊,1997, 19(5): 688-694.[2]Fraser D L. Miniature Directed Electron Beam Source. U. S. Patent 3, 753022.[3]Mobley R M, Boers J E. Computer simulation of micro-triode performance[J].IEEE Trans. on ED.1991,38(10):2383-2388[4]Kesling W D, Hunt C E. Beam focusing for field-emission flat-panel displays[J].IEEE Trans. on ED.1995, 42(2):340-347[5]庄学曾.真空微电子微波管.真空电子技术,1996, (2): 9-15.[6]Xia S, Broers A N. Adaptive finite element mesh generation program for electron gun simulation. Int1 J. Numerical Modelling 1995, 8: 109-125.[7]盛剑霓,等.电磁场数值分析.科学出版社,1984,第二章,56-126.[8]Good R H Jr.[J].Mueller E W. Field Emission, In Handbuch der Physik (Fluace S., ed.), Berlin: Springer-Verlag, Vo1.2.1956,:-[9]Hawkes P W, Kasper E. Principles of Electron Optics, Vo12: Applied Geometrical Optics, Berlin: Academic Press, 1989, 927.[10]Zhu X, Munro E M. A computer program for electron gun design using second order finite elements[J].J. Vac. Sci. Technol, B.1989, 7(6):1862-1869[11]Munro E M, Zhu X, Rouse J A, Liu H. Computer Solution of Vacuum Microelectronic Components[J].The 7th Int1 Conf. on Vacuum Microelectronics, Grenoble France.1994, 7:143-146[12]Yasushi Toma, Seigo Kanemaro, Junji Itoh. Electron-beam characteristics of double-gated Si field emitter arrays[J].J. Vac. Sci. Technol, B.1996, 14(3):1902-1905

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