Liu Xiaomei, Hu Rongxiang, Luo Jinsheng, Li Zhongjiang. TWO-DIMENSIONAL NUMERICAL SIMULATION FOR VDMOS DEVICE AND THE OPTIMIZATION OF ITS TYPICAL PARAMETERS[J]. Journal of Electronics & Information Technology, 1991, 13(6): 618-624.
Citation:
Liu Xiaomei, Hu Rongxiang, Luo Jinsheng, Li Zhongjiang. TWO-DIMENSIONAL NUMERICAL SIMULATION FOR VDMOS DEVICE AND THE OPTIMIZATION OF ITS TYPICAL PARAMETERS[J]. Journal of Electronics & Information Technology, 1991, 13(6): 618-624.
Liu Xiaomei, Hu Rongxiang, Luo Jinsheng, Li Zhongjiang. TWO-DIMENSIONAL NUMERICAL SIMULATION FOR VDMOS DEVICE AND THE OPTIMIZATION OF ITS TYPICAL PARAMETERS[J]. Journal of Electronics & Information Technology, 1991, 13(6): 618-624.
Citation:
Liu Xiaomei, Hu Rongxiang, Luo Jinsheng, Li Zhongjiang. TWO-DIMENSIONAL NUMERICAL SIMULATION FOR VDMOS DEVICE AND THE OPTIMIZATION OF ITS TYPICAL PARAMETERS[J]. Journal of Electronics & Information Technology, 1991, 13(6): 618-624.
A software for numerical simulation of power MOSFET, called TDSPM, is developed. In the program, DDM model is used. The velocity-electrical field characteristics and generation/recombination effect in high electrical field region for electrons are specially considered for simulating device performances at high voltage including the case of breakdown. The entirely coupled method is used. To enlarge the increment of applied voltage, the truncation method is employed. With the truncation method, the increment of drain-to-source of 100--200V can be used in saturation region. TDSPM is applied to simulation of VDMOS. The output characteristics are simulated. Internal distributions of some physical parameters are calculated and investigated. Special emphasis is placed on breakdown. At last the software is applied to optimization of VDMOS.
B. J. Baliga, Mordern Power Device, New York, Weley, (1987).[2]S. Selberherr, Analysis and Simulation of Power Semiconductor Device, Springer-Verlay, Wien, New York, (1984).[3]A. F. Franz, IEEE Trans. on CAD, CAD-4(1985)3, 177-189.[4]粱苏军,开关功率MOSFET的设计与研制,电子科技大学硕士论文,成都,1986年.[5]A. Schuetz, Simulation of Avalanche Breakdown in MOS Transistor, Ph. D. Dissertation, Techniche Univ.[6]Wien (in German), (1982).[7]R. Van overstraeten, Solid State Electronics, 13(1970)5, 583-608.[8]K. Hwang, D. H. Navon et al., IEEE Trans. on ED, ED-32(1985)6, 1143-1145.
DownLoad: