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Volume 14 Issue 6
Nov.  1992
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Wei Yayi. STUDY OF THE SURFACE STRUCTURE OF LEAD SILICATE GLASS REDUCED BY HYDROGEN[J]. Journal of Electronics & Information Technology, 1992, 14(6): 661-665.
Citation: Wei Yayi. STUDY OF THE SURFACE STRUCTURE OF LEAD SILICATE GLASS REDUCED BY HYDROGEN[J]. Journal of Electronics & Information Technology, 1992, 14(6): 661-665.

STUDY OF THE SURFACE STRUCTURE OF LEAD SILICATE GLASS REDUCED BY HYDROGEN

  • Received Date: 1991-06-12
  • Rev Recd Date: 1992-06-19
  • Publish Date: 1992-11-19
  • The XPS, AES and EP have been used to study the elemental depth-distributions of secondary eletron emission layer of lead silicate glass reduced by hydrogen. The samples treated at different temperatures have differences in their micro-structures. The effects of different reduced temperature have been discussed, and new model of the layer of secondary electron emitter has been suggested
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  • Max Knoll,著,华东电子管厂技术情报室编译,电子器件的材料及制备, 1972年,第906页.[2][2][3]G. E. Hill, Advancesin Elctronics and Electronic Physics. 40A,(1976), pp. 153-165.[4][3][5]陶兆民,电子学通讯,1(1979)4,184-186.[6]汪金祥,特种坡璃,3(1987)2,13-20.[7]中科院电子听六室电子倍增器研制组,电子学通讯,1976年,第2期,第1-9页.[8]A.M.Tyutikov et al., The Soviet Journal of Glass Physics and[9]Chemistry, 7 (1980) 6, 705-711.
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