MEASURMENT OF SURFACE ELECTROSTATIC POTANTIAL USING SCANNING FORCE MICROSCOPY

G,Binning G.F.Quate,C.H.Gerber,Atomic force microscopy,Phys,Rew.Lett,1986,56(6),930-933.[2]Y.Martin,D.W.Abraham,H.K.Wickramasinghe,High-resolution capacitance measurement and potentiometry by force microscopy,Appl.Phys.Lett,1988,52(13):1103-1105.[3]J.M.R.Weaver JMR,D.W.Abraham,High resolution atomic force microscopy poteutiometry,J.Vac.Sci.Technol,1991,B-9(3),1959-1561.[4]M.Nonnenmacher,M.P.OBoyte,H.K.Wickramasinghe,Kelvin probe force microscopy,Appl Phys.Lett,1991,58(25),2921-2923.[5]J.M.R.Weaver,H.K.Wickramasinghe,Semiconductor characterization by scauning force tnicroscopy surface photovoltage microscopy,J.Vac.Sci.Technol,1991,B-9(3),1562-1565.[6]A.K.Henning.T.Hochwitz,J.Slinkman,J.Never,S.Heffmann,P.Kaszuba,C.Daghlian,Two-dimensional surface dopant profiling in silicon using scanning Delvin probe microscopy,J.Appl.Phys,1995,77(5):1888-1896.[7]M.Yasutake,Improvcment of Kelvin probe force microscope(KFM)system,Jpn J.Appl.Phys,1995,34,3403-3405.[8]O.Vatel M.Tanompto.Kelvin probe force microscopy for potential distribution measurement of semiconductor devices,J.Appl.Phys.1995,77(6),2358-2362.[9]A.Kikukawa,S.Hosaka,R.Imura,Vacuum compatible high-sensitive Kelvin probe force microscopy,Rev.Sci.Instrum,1996,67(4),1463-1467.[10]M.Tanimoto.O.Vatel,Kelvin probe force microscopy for characterization of semicouductor devices and processes,J.Vac.Sci.Technol,1996,B-14(2),1547-1551.[11]M.Arakawa,S.Kishimoto,T.Mizutani,Kelvin probe force microscopy for potential distribution measurement of cleaved surface of GaAs devices,Jpn,J.Appl.Phys,1997,36:1826-1829.[12]H.O.Jacobs,H.F.Knapp,S.Muller,A.Stemmer,Surface potential mapping,A qualitative material contrast in SPM.[J].Ultramicroscopy.1997,69:39-[13]T.Uchihashi,M.Ohta,Y.Sugawara,Y.Yanase,T.Sigematsu,M.Suzuki,S.Morita,Devlopment of ultrahigh vacuum-atomic force microscopy with frequency modulation detection and its application to eletrostatic force measurement,J.Sci.Vac.Technol,1997,B-15(4):1543-1546.[14]T.Trenkler,P.De Wolf.W.Vandervorst.L.Hellemansm,Nanopotentiometry:Local potential measurement in complementary metal-oxime-semiconductor transistors using atomic force microscopy,J,Vac,Sci.Technol,1998,B-16(1),367-372.[15]S.Morita,Y.Fukano,T.Uchibashi,T.Okusako,Y.Sugawara,Y.Yamanishi,T.Oasa,Reproducible and controllable contact electrification on a thin insulator,Jpn.J.Appl.Phys.1993,Pats2,32(11B):L1701-L1703 .[16]张兆样,赵兴钰,侯士敏,薛增泉、使用扫描力显微镜测量表面电容,真空科学与技术,1999:19(增刊),244-248.