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Volume 8 Issue 3
May  1986
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Pan Qihan. MECHANISM OF SECONDARY ELECTRON EMISSION OF Cu-Al-Mg ALLOY[J]. Journal of Electronics & Information Technology, 1986, 8(3): 235-240.
Citation: Pan Qihan. MECHANISM OF SECONDARY ELECTRON EMISSION OF Cu-Al-Mg ALLOY[J]. Journal of Electronics & Information Technology, 1986, 8(3): 235-240.

MECHANISM OF SECONDARY ELECTRON EMISSION OF Cu-Al-Mg ALLOY

  • Received Date: 1900-01-01
  • Rev Recd Date: 1900-01-01
  • Publish Date: 1986-05-19
  • The slices of Cu-Al-Mg alloy with thickness of 0.1 mm are prepared. Some samples are respectively activated at the tempertures of 590℃ and 620℃. The seeondary emission factors () are determined. The composition of the surface and the electron binding-energy are studied by means of XPS and ABS. It is proved that the oxide layer consisting of Al2O3 and MgO can be formed naturally at room temperature. This oxide layer exhibits lower electron binding-energy, high and satisfactory stability.
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  • 国外电子器件,1963年,第5期,第46页.[2]苏联专利,No 493831, 1982, 2.[3]潘奇汉,Cu-Al-Mg合金冷阴极材料研究报告,北京有色金属研究总院内部资料,1934.[4]北京师范大学,简明化学手册,北京出版社,1980,第126页.[5]东北工学院,无机物热力学数据,教学讲义,1978.[6]J. Dresner and B. Goldstein, J. Appl. Phys., 47 (1976), 1038.
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