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Volume 20 Issue 4
Jul.  1998
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Zhang Zhubing, Wu Jin, Wei Tongli . NUMERICAL SIMULATION OF LOW-TEMPERATURE BIPOLAR TRANSISTOR[J]. Journal of Electronics & Information Technology, 1998, 20(4): 546-553.
Citation: Zhang Zhubing, Wu Jin, Wei Tongli . NUMERICAL SIMULATION OF LOW-TEMPERATURE BIPOLAR TRANSISTOR[J]. Journal of Electronics & Information Technology, 1998, 20(4): 546-553.

NUMERICAL SIMULATION OF LOW-TEMPERATURE BIPOLAR TRANSISTOR

  • Received Date: 1997-01-17
  • Rev Recd Date: 1997-09-17
  • Publish Date: 1998-07-19
  • Numerical models for the physical parameters and physical effects about numerical simulation of low-temperature bipolar transistor are discussed. The numerical approaches required for simulation of low-temperature behavior are presented. A simulation program has been given to investigate bipolar transistor behavior range of 77-300K. Finally, the characteristics of a typical bipolar transistor are simulated at 300K and 77K.
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  • 郑茳.硅低温双极品体管的理论与优化设计:[博士论文],南京:东南大学,1994.5.[2]Blaudau W, Onton A Heinke W. Temperature dependence of the bandgap of silicon[J].J. Appl. Phys.1974, 45(4):1846-1848[3]Wagner J, et al. Band-gap narrowing in heavily doped silicon: A comparison of optical and[4]electrical data. J. Appl. Phys,1988, 63(2): 425-433.[5]Slotboom W, H. C. De Graaff. Measurement of bandgap narrowing in silicon bipolar transistors. Solid-State Electronics, 1976, 19(10): 857-862.[6]Chen Y W, et al. Two-dimensional analysis of a BiNMOS transistor operating at 77K using a[7]modified PISCES program. IEEE Trans. on Electron Devices, 1992, ED-39(2): 348-356.[8]Selberherr S. MOS device modeling at 77K. IEEE Trans. on Electron Devices, 1989, ED-36(9): 1464-1476.[9]Ghazavi P, Ho F D.A numerical model for MOSFETs from liquid-nitrogen temperate to room temperate. IEEE Trans. on Electron Device, 1995, ED-42(1): 123-131.[10]Chen Y W, James B K. Two-dimensional analysis of a Binmos transistor operating at 77K using[11]a modified PISCES program. IEEE Trans. on Electron Devices, 1992, ED-39(2): 348-357.
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