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Volume 18 Issue 3
May  1996
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Tang Zongxi, Zhang Qishao. MEASUREMENT OF COMPLEX PERMITTIVITY OF MIC SUBSTRATES FOR DEPOSITION OF HTS THIN FILMS[J]. Journal of Electronics & Information Technology, 1996, 18(3): 317-321.
Citation: Tang Zongxi, Zhang Qishao. MEASUREMENT OF COMPLEX PERMITTIVITY OF MIC SUBSTRATES FOR DEPOSITION OF HTS THIN FILMS[J]. Journal of Electronics & Information Technology, 1996, 18(3): 317-321.

MEASUREMENT OF COMPLEX PERMITTIVITY OF MIC SUBSTRATES FOR DEPOSITION OF HTS THIN FILMS

  • Received Date: 1994-08-06
  • Rev Recd Date: 1995-04-24
  • Publish Date: 1996-05-19
  • A technique is analysed for the determination of complex permittivity of MIC substrates for deposition of high- superconducting (HTS) thin films. By using high Q factor TM circular cavity, several monocrystals which are often used for deposition of HTS thin films are measured. The results show that the technique covers accurate measurements of the low-loww monocrystal and isotropy dielectric materials at different temperature, and the test is simple, rapid and automatic, and some directional complex permittivity of the dielectric materials can be measured.
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  • Wu M K, et al. Phys[J].Rev. Lett.1987, 58(5):908-910[2]Konopka J, et al. Dielectric Properties of Substrates for Deposition of High-Tc Thin Films up to[3]GHz, 1992 Applied Superconductivity Conference. Chicago:Aug. 1992.[4]Sobolewski R,et al. IEEE Trans. on MAG, 1991, MAG-27(2): 876-879.[5]Konapka J, et al. J[J].Appl. Phys.1992, 72(1):218-223[6]R. A 瓦尔特朗著,徐鲤庭译.被导电磁波原理.北京:人民邮电出版社,1977,第五章.
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