A NOVEL Ku-BAND LOW NOISE AMPLIFIER WITH HEMT AND GaAs MMIC

A novel Ku-band low noise amplifier with high electron mobility transis-ror (HEMT) and GaAs monolithic microwave integrated circuit (MMIC) has been demonstrated. Its noise figure is less than 1.9dB with an associated gain over 27dB and an input-output VSWR less than 1.4 in the frequency range of 11.7-12.2 GHz. The HEMT and the microwave series inductance feedback technique arc used in the first stage of the amplifier, and the Ku-band MMIC is used in the last stage. The key to this design is to achieve a simultaneous optimum noise match and a minimum input VSWR match by using the microwave series inductance feedback method. The BJ-120 waveguides are used in both input and output of the amplifier.