SPECTRA EFFECTS OF ANOMALOUS TRANSIENT RESPONSE IN -Si:H FILM

Hai Yuhan; Zhou Zhongyi

Volume 7 Issue 2

Mar. 1985

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Article Navigation > Journal of Electronics & Information Technology > 1985 > 7(2): 108-113

Hai Yuhan, Zhou Zhongyi. SPECTRA EFFECTS OF ANOMALOUS TRANSIENT RESPONSE IN -Si:H FILM[J]. Journal of Electronics & Information Technology, 1985, 7(2): 108-113.

Citation:

Hai Yuhan, Zhou Zhongyi. SPECTRA EFFECTS OF ANOMALOUS TRANSIENT RESPONSE IN -Si:H FILM[J]. Journal of Electronics & Information Technology, 1985, 7(2): 108-113.

Hai Yuhan, Zhou Zhongyi. SPECTRA EFFECTS OF ANOMALOUS TRANSIENT RESPONSE IN -Si:H FILM[J]. Journal of Electronics & Information Technology, 1985, 7(2): 108-113.

Citation:

Hai Yuhan, Zhou Zhongyi. SPECTRA EFFECTS OF ANOMALOUS TRANSIENT RESPONSE IN -Si:H FILM[J]. Journal of Electronics & Information Technology, 1985, 7(2): 108-113.

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SPECTRA EFFECTS OF ANOMALOUS TRANSIENT RESPONSE IN -Si:H FILM

Received Date: 1983-07-22
Rev Recd Date: 1984-09-28
Publish Date: 1985-03-19

Abstract

Abstract

Transient photoresponse spectra in -Si: H film with sandwich structure are measured. It is found that at the starting part of these curves anomalous pulse appears under either a small forward bias or a small reverse one. The pulse amplitude decreases when the light wavelength increases. Analysis of the transient response spectra without bias, showed that this anomalous non-transport component originates from the barrier region. Its rise or deeay characteristic is determined by space-charge-limited photocurents. With the relation between its amplitude and optical absorption, we developed a method to obtain optical band gap of the films studied.

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References(1)

References

海字涵等,电子科学学刊,5(1983), 361.[2]T. Datta and M. Silver,J.Phys., Colloq. C-4, 42(1981), 563.[3]海字涵,周忠毅,电子学通讯,4(1982), 248.[4]A. Many et al., Phys. Rev., 126(1962), 1980.[5]P. Mark et al., J. Appl. Phys., 33(1962), 205.[6]A. Rose, Concepts in Photoconductivity and Allied Problems, John Wiley Sons, Inc., 1963, p. 77.[7]R. Willians et al., RCA Rev., 40(1979), 371.[8]H. Fritzsche et al., Solid State Technology, Jan. 1978, 55.[9]R. J. Loveland et al.,J.Non-cryst. Sol., 13(1973/74), 55.

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