THE INFLUENCE OF LASER RECRYSTALLIZATION AND PLASMA HYDROGEN ANNEALING ON THE ELECTRICAL PROPERTIES OF POLYSILICON

Fang Fang; Lin Chenglu; Slien Zongyong; Zou Shichang

Volume 8 Issue 1

Jan. 1986

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Article Navigation > Journal of Electronics & Information Technology > 1986 > 8(1): 45-51

Fang Fang, Lin Chenglu, Slien Zongyong, Zou Shichang. THE INFLUENCE OF LASER RECRYSTALLIZATION AND PLASMA HYDROGEN ANNEALING ON THE ELECTRICAL PROPERTIES OF POLYSILICON[J]. Journal of Electronics & Information Technology, 1986, 8(1): 45-51.

Citation:

Fang Fang, Lin Chenglu, Slien Zongyong, Zou Shichang. THE INFLUENCE OF LASER RECRYSTALLIZATION AND PLASMA HYDROGEN ANNEALING ON THE ELECTRICAL PROPERTIES OF POLYSILICON[J]. Journal of Electronics & Information Technology, 1986, 8(1): 45-51.

Citation:

Fang Fang, Lin Chenglu, Slien Zongyong, Zou Shichang. THE INFLUENCE OF LASER RECRYSTALLIZATION AND PLASMA HYDROGEN ANNEALING ON THE ELECTRICAL PROPERTIES OF POLYSILICON[J]. Journal of Electronics & Information Technology, 1986, 8(1): 45-51.

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THE INFLUENCE OF LASER RECRYSTALLIZATION AND PLASMA HYDROGEN ANNEALING ON THE ELECTRICAL PROPERTIES OF POLYSILICON

Received Date: 1900-01-01
Rev Recd Date: 1900-01-01
Publish Date: 1986-01-19

Abstract

Abstract

Asenic ions are implanted with doses of 5101151015 cm-2 into LPCVD polysilicon films o nSiO2 substrate, which have been recrystallized with CW Ar+ laser before implantation. Electrical measurements show that its resistivity is lowered and its mobility is inereased significamtly at low doping concentration (1017 As+cm-3). Plasma hydrcgen annealing is performed on laser recrystallized samples. The electrieal character is ics of plasma hydrogen annealed samples are close to that of single-crystalline silicon. Based on the existing theoretical modelsforconduction in polysilicon, a new formula for large grain polysilicon has been proposed, with help of which a good agreement between the theory and experimental results is achieved in the range of doping concentration from 1016cm-3 to 1020cm-3.

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References(1)

References

邹世昌,沈宗雍,林成鲁,倪如山,林梓鑫,姚良骐,朱桂枫,电子学报,1983年,第5期,第1页.[2]S. Kawamura, N. Sasaki, T. Iwai, M. Nakano and M. Takagi, IEEE Electron Device Letters,EDL-4 (1983 ), 366.[3]中野元雄,电子材料,23(1984), 54.[4]J.Y. W. Seto, J. Appl. Phys., 46(1975), 5247.[5]N. C. C. Lu, L. Gerzberg, C. Y. Lu and J. D. Meindl, IEEE Trans. on ED, ED-28 (1981), 818.[6]M. M. Mandurah, K. C. Saraswat and T. I. Kamins, ibid ED-28 (1981), 1163.[7]N. C. C. Lu, L. Gerzberg, C. Y. Lu and J. D.Meindl, ibid, ED-30(1983), 137.[8]J. P. Colinge, E. Demoulin and H. Morel, IEDM Tech. Dig., Dec. 1982.[9]J. G. Fossum and A. O. Conde, IEEE Trans. on ED, ED-30(1983), 933.

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