Zhuang Yiqi, Sun Qing, Hou Xun . 1/F NOISE AS A PREDICTION OF LONG-TERM DRIFT FOR INTEGRATED OPERTIONAL AMPLIFIERS[J]. Journal of Electronics & Information Technology, 1996, 18(4): 401-407.
Citation:
Zhuang Yiqi, Sun Qing, Hou Xun . 1/F NOISE AS A PREDICTION OF LONG-TERM DRIFT FOR INTEGRATED OPERTIONAL AMPLIFIERS[J]. Journal of Electronics & Information Technology, 1996, 18(4): 401-407.
Zhuang Yiqi, Sun Qing, Hou Xun . 1/F NOISE AS A PREDICTION OF LONG-TERM DRIFT FOR INTEGRATED OPERTIONAL AMPLIFIERS[J]. Journal of Electronics & Information Technology, 1996, 18(4): 401-407.
Citation:
Zhuang Yiqi, Sun Qing, Hou Xun . 1/F NOISE AS A PREDICTION OF LONG-TERM DRIFT FOR INTEGRATED OPERTIONAL AMPLIFIERS[J]. Journal of Electronics & Information Technology, 1996, 18(4): 401-407.
It is shown from the accelerated lifetime test and noise measurement for integrated operational amplifiers that if their failure is caused by the drift of input bias current or input offset current, the drift is strongly correlated with 1/f noise current in these devices, and both are proportional approximately. In the mechanism analysis, the drift may be attributed to the slow capture effect of oxide traps, which are 1/f noise sources, on the electrons in silicon. Therefore, 1/f noise measurement can be used as a fast and non-destructive tool to evaluate the long term instability of integrated operational amplifiers.
Jones B K. Electrical noise as a measure of quality and reliability in electron devices. Advances in Electronics and Electron Physics, New Yotk: Academic Press, Inc., 1994, 87, 1-204.[2]庄奕琪,孙青.半导体器件中的噪声及其低噪声化技术.北京:国防工业出版社,1993年,第5章和第7章.[3]Zhuang Yiqi, Sun Qing. IEEE Trans. on ED, 1991, ED-38(11): 2540-2547.
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