Huang Liuxing, Wei Tongli, Zheng Jiang, Cao Juncheng. MODEL AND MODELING OF LOW TEMPERATURE CURRENT GAIN OF POLYSILICON EMITTER BIPOLAR TRANSISTOR[J]. Journal of Electronics & Information Technology, 1994, 16(2): 207-211.
Citation:
Huang Liuxing, Wei Tongli, Zheng Jiang, Cao Juncheng. MODEL AND MODELING OF LOW TEMPERATURE CURRENT GAIN OF POLYSILICON EMITTER BIPOLAR TRANSISTOR[J]. Journal of Electronics & Information Technology, 1994, 16(2): 207-211.
Huang Liuxing, Wei Tongli, Zheng Jiang, Cao Juncheng. MODEL AND MODELING OF LOW TEMPERATURE CURRENT GAIN OF POLYSILICON EMITTER BIPOLAR TRANSISTOR[J]. Journal of Electronics & Information Technology, 1994, 16(2): 207-211.
Citation:
Huang Liuxing, Wei Tongli, Zheng Jiang, Cao Juncheng. MODEL AND MODELING OF LOW TEMPERATURE CURRENT GAIN OF POLYSILICON EMITTER BIPOLAR TRANSISTOR[J]. Journal of Electronics & Information Technology, 1994, 16(2): 207-211.
A unified model of low temperature current gain of polysilicon emitter bipolar transistors based on effective recombination speed method is presented, incorporating bandgap narrowing, carrier freezing-out and tunneling of holes through interface oxide. The modeling results based on the unified model are in good agreement with experimental data.
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