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Volume 44 Issue 9
Sep.  2022
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FANG Yi, LIANG Xusheng, SHI Zhifang, HAN Guojun. An Performance Optimization Scheme for Flash Memory System in 6G Mobile Network: Bit Remapping[J]. Journal of Electronics & Information Technology, 2022, 44(9): 3083-3090. doi: 10.11999/JEIT220343
Citation: FANG Yi, LIANG Xusheng, SHI Zhifang, HAN Guojun. An Performance Optimization Scheme for Flash Memory System in 6G Mobile Network: Bit Remapping[J]. Journal of Electronics & Information Technology, 2022, 44(9): 3083-3090. doi: 10.11999/JEIT220343

An Performance Optimization Scheme for Flash Memory System in 6G Mobile Network: Bit Remapping

doi: 10.11999/JEIT220343
Funds:  The National Natural Science Foundation of China (62071131, U2001203), The Guangdong Natural Science Funds for Distinguished Young Scholar (2022B1515020086)
  • Received Date: 2022-03-30
  • Rev Recd Date: 2022-06-20
  • Available Online: 2022-06-29
  • Publish Date: 2022-09-19
  • The massive data generated by the sixth generation mobile communication technology (6G) network brings new challenges to data storage, which promotes further the rapid development of storage technology. Not AND (NAND) flash memory has the advantages of fast reading/writing speed and high reliability, and hence it possesses a wide application prospect in the 6G network. To improve the reliability of NAND flash memory, according to the error characteristics of two different bit-line structures, an all-bit-line-structure-aided equal-precision remapping scheme and an odd-even-bit-line-structure-aided unequal-precision remapping scheme are proposed. Simulation results show that the two new remapping schemes improve effectively the bit error performance of flash memory. Therefore, the remapping technology proposed in this paper can be regarded as a reliable and efficient storage optimization technology for 6G network.
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