Citation: | Yuejun ZHANG, Jinliang HAN, Huihong ZHANG. High-Robust Sub-threshold Standard Cells Using Schmitt Trigger[J]. Journal of Electronics & Information Technology, 2021, 43(6): 1550-1558. doi: 10.11999/JEIT210001 |
[1] |
WANG A and CHANDRAKASAN A. A 180-mV subthreshold FFT processor using a minimum energy design methodology[J]. IEEE Journal of Solid-State Circuits, 2005, 40(1): 310–319. doi: 10.1109/JSSC.2004.837945
|
[2] |
SHI Weiwei, PENG Panfeng, and CHOY C S. A 90nm passive RFID tag’s custom baseband processor for subthreshold operation below 0.3V[J]. Chinese Journal of Electronics, 2017, 26(4): 720–724. doi: 10.1049/cje.2017.04.006
|
[3] |
WEN Liang, NAN Longmei, ZHANG Jing, et al. 65 nm sub-threshold logic standard cell library using quasi-schmitt-trigger design scheme and inverse narrow width effect aware sizing[J]. IET Circuits, Devices & Systems, 2020, 14(3): 303–310. doi: 10.1049/iet-cds.2019.0028
|
[4] |
ZHOU Jun, JAYAPAL S, BUSZE B, et al. A 40 nm dual-width standard cell library for near/sub-threshold operation[J]. IEEE Transactions on Circuits and Systems I: Regular Papers, 2012, 59(11): 2569–2577. doi: 10.1109/TCSI.2012.2190674
|
[5] |
金威. 面向超低功耗的抗PVT波动电路设计技术研究[D]. [博士论文], 上海交通大学, 2017.
JIN Wei. Research on ultra-low power PVT tolerant circuits design techniques[D]. [Ph. D. dissertation], Shanghai Jiao Tong University, 2017.
|
[6] |
MORRIS J. A novel deep submicron bulk planar sizing strategy for low energy subthreshold standard cell libraries[D]. [Ph. D. dissertation], Newcastle University, 2018.
|
[7] |
MIYAMOTO M, OHTA H, KUMAGAI Y, et al. Impact of reducing STI-induced stress on layout dependence of MOSFET characteristics[J]. IEEE Transactions on Electron Devices, 2004, 51(3): 440–443. doi: 10.1109/TED.2003.822877
|
[8] |
ALAM N, ANAND B, and DASGUPTA S. The impact of process-induced mechanical stress in narrow width devices and circuit design issues[C]. 2012 International Symposium on Electronic System Design, Kolkata, India, 2012: 213–215. doi: 10.1109/ISED.2012.42.
|
[9] |
REYNDERS N and DEHAENE W. Variation-resilient building blocks for ultra-low-energy sub-threshold design[J]. IEEE Transactions on Circuits and Systems II: Express Briefs, 2012, 59(12): 898–902. doi: 10.1109/TCSII.2012.2231022
|
[10] |
LOTZE N and MANOLI Y. A 62mV 0.13μm CMOS standard-cell-based design technique using schmitt-trigger logic[C]. Proceedings of 2011 IEEE International Solid-State Circuits Conference, San Francisco USA, 2011: 340–342. doi: 10.1109/ISSCC.2011.5746345.
|
[11] |
SHARMA P, JAIN P, and DAS B P. An optimal device sizing for a performance-driven and area-efficient subthreshold cell library for IoT applications[J]. Microelectronics Journal, 2019, 92: 104613. doi: 10.1016/j.mejo.2019.104613
|
[12] |
NISHIZAWA S, ISHIHARA T, and ONODERA H. A flexible structure of standard cell and its optimization method for near-threshold voltage operation[C]. The 2012 IEEE 30th International Conference on Computer Design, Montreal, Canada, 2012: 235–240. doi: 10.1109/ICCD.2012.6378646.
|
[13] |
GEMMEKE T, ASHOUEI M, LIU Bo, et al. Cell libraries for robust low-voltage operation in nanometer technologies[J]. Solid-State Electronics, 2013, 84: 132–141. doi: 10.1016/j.sse.2013.02.006
|
[14] |
AYERS J E. Digital Integrated Circuits: Analysis and Design[M]. 2nd ed. Boca Raton: CRC Press, 2010: 256–257.
|
[15] |
HSIAO S F, TSAI M Y, and WEN C S. Low area/power synthesis using hybrid pass transistor/CMOS logic cells in standard cell-based design environment[J]. IEEE Transactions on Circuits and Systems II: Express Briefs, 2010, 57(1): 21–25. doi: 10.1109/TCSII.2009.2034198
|
[16] |
JUN J, SONG J, and KIM C. A near-threshold voltage oriented digital cell library for high-energy efficiency and optimized performance in 65nm CMOS process[J] IEEE Transactions on Circuits and Systems I: Regular Papers, 2018, 65(5): 1567–1580. doi: 10.1109/TCSI.2017.2758793.
|
[17] |
BORTOLON F T, MOREIRA M T, MORAES F G, et al. Estimation methods for static noise margins in CMOS subthreshold logic circuits[C]. The 30th Symposium on Integrated Circuits and Systems Design, Fortaleza, Brazil, 2017: 90–95. doi: 10.1145/3109984.3109998.
|
[18] |
丁杰. 0.6V 40nm低电压标准单元库设计[D]. [硕士论文], 东南大学, 2016.
DING Jie. Design of 40nm standard cell library for 0.6V low voltage[D]. [Master dissertation], Southeast University, 2016.
|