Design of Heterogeneous Memristor Based 1T2M Multi-value Memory Crossbar Array

Jingru SUN; Mengyuan LI; Kexin KANG; Shaopeng ZHU; Yichuang SUN

doi:10.11999/JEIT201108

Volume 43 Issue 6

Jun. 2021

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Article Navigation > Journal of Electronics & Information Technology > 2021 > 43(6): 1533-1540

Jingru SUN, Mengyuan LI, Kexin KANG, Shaopeng ZHU, Yichuang SUN. Design of Heterogeneous Memristor Based 1T2M Multi-value Memory Crossbar Array[J]. Journal of Electronics & Information Technology, 2021, 43(6): 1533-1540. doi: 10.11999/JEIT201108

Citation:

Jingru SUN, Mengyuan LI, Kexin KANG, Shaopeng ZHU, Yichuang SUN. Design of Heterogeneous Memristor Based 1T2M Multi-value Memory Crossbar Array[J]. Journal of Electronics & Information Technology, 2021, 43(6): 1533-1540. doi: 10.11999/JEIT201108

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Design of Heterogeneous Memristor Based 1T2M Multi-value Memory Crossbar Array

doi: 10.11999/JEIT201108

1.
College of Computer Science and Electronic Engineering, Hunan University, Changsha 410082, China
2.
School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing 100089, China
3.
School of Physics, Engineering and Computer Science, University of Hertfordshire, Hatfield AL10 9AB, UK

Funds: The Major Research Project of the National Natural Science Foundation of China (91964108), The National Natural Science Foundation of China (61971185), The Open Fund Project of Key Laboratory in Hunan Universities (20K027)

Received Date: 2020-12-31
Rev Recd Date: 2021-04-05

Available Online: 2021-04-19

Publish Date: 2021-06-18

Abstract

Abstract

As a new type of electronic component, memristor has the characteristics of small size, fast reading and writing speed, non-volatile and easy to be compatible with CMOS circuits. It is one of the most promising technologies to realize non-volatile memory. However, the existing multi-value storage cross array has problems such as complex circuit structure, sneak path problem and low storage density, which affect the practicability of the multi-value storage cross array. In this paper, a multi-value memory crossbar array based on heterogeneous memristors is proposed, in which the memory cell is composed of one Transistor and two heterogeneous Memristors (1T2M) with different threshold voltages and R_on resistance values. A single voltage signal completes the four-value read and write operation, which reduces the current path and simplifies the circuit structure. Simulation verification by PSpice shows that compared with existing work, the proposed 1T2M multi-value memory crossbar array has simpler circuit structure, higher storage density, faster reading and writing speed, and overcomes better the leakage current problem.
- Memristor,
- Memory,
- Crossbar array,
- Sneak paths

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References(29)

References

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