Wide-IF-bandwidth CMOS Down-conversion Mixer MMIC

Geliang YANG; Bin LI

doi:10.11999/JEIT200957

Volume 43 Issue 6

Jun. 2021

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Geliang YANG, Bin LI. Wide-IF-bandwidth CMOS Down-conversion Mixer MMIC[J]. Journal of Electronics & Information Technology, 2021, 43(6): 1603-1608. doi: 10.11999/JEIT200957

Citation:

Geliang YANG, Bin LI. Wide-IF-bandwidth CMOS Down-conversion Mixer MMIC[J]. Journal of Electronics & Information Technology, 2021, 43(6): 1603-1608. doi: 10.11999/JEIT200957

Geliang YANG, Bin LI. Wide-IF-bandwidth CMOS Down-conversion Mixer MMIC[J]. Journal of Electronics & Information Technology, 2021, 43(6): 1603-1608. doi: 10.11999/JEIT200957

Citation:

Geliang YANG, Bin LI. Wide-IF-bandwidth CMOS Down-conversion Mixer MMIC[J]. Journal of Electronics & Information Technology, 2021, 43(6): 1603-1608. doi: 10.11999/JEIT200957

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Wide-IF-bandwidth CMOS Down-conversion Mixer MMIC

doi: 10.11999/JEIT200957

Geliang YANG^,,
Bin LI

The 54th Research Institute of China Electronics Technology Group Corporation, Shijiazhuang 050081, China

Funds: S&T Program of Hebei (18960202D)

Received Date: 2020-11-09
Rev Recd Date: 2021-03-25

Available Online: 2021-04-13

Publish Date: 2021-06-18

Abstract

Abstract

A wide-Intermediate-Frequency (IF) down-conversion mixer operating in millimeter-wave band is proposed. The mixer is designed based on a passive double-balanced structure integrating Radio-Frequency (RF) and Local-Oscillator (LO) baluns. To optimize the performances in terms of the Conversion Gain (CG), bandwidth and isolations of the mixer, the gate-inductive technique is employed. The measured results show that the mixer features a wide IF bandwidth from 0.5 to 12 GHz. A measured CG of –8.5～–5.5 dB is achieved within such a wide IF band at a LO power (P_LO) of 4 dBm and a LO frequency (f_LO) of 30 GHz. The proposed mixer also achieves a CG with a ripple of 2 dB from –7.9 to –5.9 dB in a wide RF band (f_RF) from 25 to 45 GHz at a P_LO of 4 dBm and a fixed IF frequency (f_IF) of 0.5 GHz. The measured LO-to-IF, LO-to-RF and RF-to-IF isolations are better than 42, 50 and 43 dB, respectively. The chip is fabricated in TSMC 90 nm CMOS process with an area of 0.4 mm².
- CMOS integrated circuit,
- Millimetre-wave,
- Mixer,
- Wide IF

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References(16)

References

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