具有NiO异质结和叉指栅柱调制的抗单粒子Ga<sub>2</sub>O<sub>3</sub>金属氧化物半导体场效应晶体管

高升; 张琳; 吴艳君; 王琦; 井亮

doi:10.11999/JEIT260396

具有NiO异质结和叉指栅柱调制的抗单粒子Ga₂O₃金属氧化物半导体场效应晶体管

doi: 10.11999/JEIT260396 cstr: 32379.14.JEIT260396

高升^{1, 2, ,},
张琳¹,
吴艳君¹,
王琦¹,
井亮²

1.
重庆邮电大学集成电路学院重庆 400065
2.
华润微电子(重庆)有限公司重庆 400030

基金项目: 国家自然科学基金(62404026)

详细信息

作者简介:
高升：男，副教授，研究方向为宽禁带半导体器件设计、制备及可靠性研究

张琳：女，硕士生，研究方向为Ga₂O₃ MOSFET设计

吴艳君：女，硕士生，研究方向为GaN功率器件可靠性研究

王琦：女，讲师，研究方向为第三代半导体器件可靠性研究

井亮：男，高级工程师，研究方向为第三代半导体器件设计与制造

通讯作者:
高升　gaosheng@cqupt.edu.cn

中图分类号: TN386
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出版历程
- 收稿日期: 2026-04-07
- 修回日期: 2026-07-03
- 录用日期: 2026-07-03
- 网络出版日期: 2026-07-12

Radiation-Hardened Ga₂O₃ MOSFET Design Featuring NiO Heterojunction and Comb-Shaped Gate Modulation

GAO Sheng^{1, 2
, ,},
ZHANG Lin¹,
WU Yanjun¹,
WANG Qi¹,
JING Liang²

1.
School of Integrated Circuits, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
2.
China Resources Microelectronics (Chongqing) Limited, Chongqing 400030, China

Funds: The National Natural Science Foundation of China (62404026)

摘要

摘要: 该文提出一种具备抗单粒子烧毁(SEB)能力的复合叉指栅柱结构氧化镓金属氧化物半导体场效应晶体管(CSG-MOSFET)。该器件在N型Ga₂O₃沟道层上方引入P型NiO层，并通过叉指栅柱将其与延伸栅场板实现电气连接。基于P-NiO/N-Ga₂O₃异质结的电荷补偿效应，该结构显著优化了沟道内的电场分布。同时，叉指栅柱作为关键的电场调制单元，与延伸场板协同作用，不仅有效抑制了传统器件(C-MOSFET)中栅极场板边缘的电场拥挤效应，更将易诱发单粒子雪崩击穿的峰值电场区域从脆弱的栅极边缘主动转移至最外侧栅柱边缘。TCAD仿真结果表明，在重离子辐照下，所提CSG-MOSFET将其SEB阈值电压(V_SEB)从传统器件的240 V大幅提升至2280 V，充分证实了该复合结构在提升Ga₂O₃功率器件抗辐射性能方面的优势。
- Ga₂O₃ MOSFET /
- 抗辐照加固 /
- 叉指栅柱
Abstract: Objective Gallium Oxide Metal-Oxide-Semiconductor Field-Effect Transistor (Ga₂O₃ MOSFET) is regarded as a promising power device for high-voltage applications, particularly in aerospace and satellite power systems, because of its ultra-wide bandgap and high critical breakdown field. However, the Conventional MOSFET (C-MOSFET) exhibits limited reliability in space radiation environments. Under off-state conditions, the electric field is highly concentrated near the gate edge. Heavy-ion irradiation generates dense electron-hole pairs along the ion track. Driven by the intense electric field, these carriers undergo avalanche multiplication through impact ionization, causing the drain current to increase sharply without recovery and ultimately leading to irreversible Single-Event Burnout (SEB) at relatively low drain bias. This failure mechanism severely limits the application of Ga₂O₃ MOSFETs in harsh radiation environments. Furthermore, the lack of reliable and efficient p-type doping restricts the implementation of conventional radiation-hardening techniques, including junction termination extension and junction isolation. Therefore, ionization-induced carriers readily accumulate in sensitive regions, increasing susceptibility to Single-Event Effect (SEE). The extremely low thermal conductivity of Ga₂O₃ further promotes local heat accumulation following heavy-ion irradiation, producing localized hot spots that increase the likelihood of thermal burnout. Existing hardening approaches, including field-plate optimization and dielectric engineering, provide only limited improvement. Moreover, the application of heterojunction structures for radiation hardening has rarely been investigated, and systematic hardening strategies have not yet been established. To address these limitations, this paper proposes a Comb-Shaped Gate Metal-Oxide-Semiconductor Field-Effect Transistor (CSG-MOSFET) incorporating a NiO heterojunction. The proposed structure redistributes the channel electric field, suppresses electric-field crowding at the conventional gate edge, and significantly improves SEB tolerance, providing an effective solution for Ga₂O₃ power devices operating in harsh radiation environments. Methods Technology Computer-Aided Design (TCAD) simulations are performed to evaluate the electrical characteristics and SEB performance of the proposed CSG-MOSFET in comparison with the C-MOSFET. The simulations incorporate high-field mobility, Shockley-Read-Hall recombination, Auger recombination, impact ionization, and heavy-ion models. Based on the charge-compensation effect of the p-NiO/n-Ga₂O₃ heterojunction, the proposed structure utilizes the extended depletion region formed at the heterointerface to redistribute the channel electric field. This heterojunction-induced depletion region improves electric-field uniformity and enhances SEB tolerance. Furthermore, the comb-shaped gate columns, operating together with the extended gate field plate, relocate the peak electric field away from the conventional gate edge, suppress local electric-field crowding, and improve device reliability under high-voltage and radiation conditions. Results and Discussions Simulation results demonstrate that the optimized Double Comb-Shaped Gate MOSFET (DCSG-MOSFET) significantly improves radiation hardness compared with the C-MOSFET. The SEB Threshold Voltage (VSEB) increases from 240 V to 2 280 V, while the Breakdown Voltage (BV) increases from 2 000 V to 3 500 V. Meanwhile, the specific on-resistance decreases. Therefore, the Baliga Figure of Merit (BFOM) and the SEB-based figure of merit are substantially improved. The NiO heterojunction and comb-shaped gate columns effectively redistribute the electric field, shifting the peak electric field from the conventional gate edge to the outer gate-column edge and suppressing local electric-field crowding. These improvements substantially enhance the radiation hardness of the device. Conclusions A radiation-hardened DCSG-MOSFET incorporating a NiO heterojunction is proposed and evaluated using TCAD simulations. The optimized structure significantly improves SEB tolerance while maintaining excellent electrical performance. Compared with the C-MOSFET, both V_SEB and BV are substantially increased, demonstrating enhanced blocking capability. Charge compensation at the p-NiO/n-Ga2O3 heterojunction forms an extended depletion region that effectively redistributes the channel electric field and suppresses electric-field crowding near the conventional gate edge. Furthermore, the comb-shaped gate columns, operating together with the extended gate field plate, relocate the peak electric field to the outermost gate-column edge, thereby suppressing impact ionization induced by heavy-ion irradiation and effectively mitigating SEB. The reduced specific on-resistance further improves the BFOM and the SEB-based figure of merit. These results demonstrate that the proposed DCSG-MOSFET is a promising candidate for power electronic applications in harsh radiation environments, including aerospace and satellite systems.
- Gallium Oxide Metal-Oxide-Semiconductor Field-Effect Transistor (Ga₂O₃ MOSFET) /
- Radiation hardening /
- Comb-shaped gate pillar

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图 1 器件截面图

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图 2 C-MOSFET与文献[16]的拟合

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图 3 C-MOSFET发生SEB前后不同时刻下的电子浓度分布图

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图 4 C-MOSFET发生SEB前后不同时刻下的空穴浓度分布图

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图 5 C-MOSFET在V_D=250 V时不同时刻下的电场分布曲线与碰撞生成率

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图 6 SCSG-MOSFET中不同L下的导通特性

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图 7 不同L值对SCSG-MOSFET的BV及电场分布影响

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图 8 SCSG-MOSFET中V_SEB值对比与瞬态漏极电流曲线

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图 9 SCSG-MOSFET发生SEB前后不同时刻下的电子浓度分布图

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图 10 SCSG-MOSFET发生SEB前后不同时刻下的空穴浓度分布图

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图 11 SCSG-MOSFET在V_D=2090 V时不同时刻下的电场分布曲线与碰撞生成率

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图 12 SCSG-MOSFET中不同N_A下的导通特性

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图 13 SCSG-MOSFET中V_SEB值对比与瞬态漏极电流曲线

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图 14 不同叉指栅柱个数下的基本电学特性与V_SEB值对比

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图 15 不同叉指栅柱个数下发生SEB前后的瞬态漏极电流曲线

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图 16 DCSG-MOSFET在V_D=2290 V时不同时刻下的电场分布曲线与碰撞生成率

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图 17 DCSG-MOSFET的简化制造流程示意图

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表 1 所有器件的主要参数

器件参数	数值
N型Ga₂O₃沟道掺杂浓度	5×10¹⁷ cm^–3
N⁺区掺杂浓度	1×10¹⁹ cm^–3
N⁺区厚度	50 nm
P-NiO区厚度	80 nm
P-NiO区长度 (L)	变量
P-NiO区掺杂浓度(N_A)	变量
P⁺⁺区厚度	10 nm
P⁺⁺区掺杂浓度	1×10¹⁹ cm^–3

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表 2 所有器件的主要电学特性参数(L=8 μm, N_A=1e16 cm^–3)

器件特性	C-MOSFET	SCSG-MOSFET	DCSG-MOSFET	TCSG-MOSFET
V_th(V)	–20	–20	–20	–20
R_on,sp(mΩ/cm²)	39.6	31.4	31.4	31.4
BV(V)	2000	3200	3500	2300
V_SEB(V)	240	1970	2280	1260
BFOM(BV²/R_on,sp)	0.1 GW/cm²	0.33 GW/cm²	0.39 GW/cm²	0.17 GW/cm²
BFOM(V_SEB²/R_on,sp)	0.001 GW/cm²	0.12 GW/cm²	0.17 GW/cm²	0.05 GW/cm²

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参考文献(17)

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