Radiation-Hardened Ga2O3 MOSFET Design Featuring NiO Heterojunction and Comb-Shaped Gate Modulation
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摘要: 本文提出了一种具备抗单粒子烧毁(Single-Event Burnout，SEB)能力的复合叉指栅柱结构氧化镓金属氧化物半导体场效应晶体管(Comb-Shaped Gate Metal-Oxide-Semiconductor Field-Effect Transistor，CSG-MOSFET)。该器件在N型Ga2O3沟道层上方引入P型NiO层，并通过叉指栅柱将其与延伸栅场板实现电气连接。基于P-NiO/N-Ga2O3异质结的电荷补偿效应，该结构显著优化了沟道内的电场分布。同时，叉指栅柱作为关键的电场调制单元，与延伸场板协同作用，不仅有效抑制了传统器件(Conventional-MOSFET，C-MOSFET)中栅极场板边缘的电场拥挤效应，更将易诱发单粒子雪崩击穿的峰值电场区域从脆弱的栅极边缘主动转移至最外侧栅柱边缘。TCAD仿真结果表明，在重离子辐照下，所提出的CSG-MOSFET将其SEB阈值电压(VSEB)从传统器件的240 V大幅提升至
2280 V，充分证实了该复合结构在提升Ga2O3功率器件抗辐射性能方面的优势。-
关键词:
- Ga2O3 MOSFET /
- 抗辐照加固 /
- 叉指栅柱
Abstract:Objective Gallium Oxide Metal-Oxide-Semiconductor Field-Effect Transistor (Ga2O3 MOSFET) is considered a promising power device for high-voltage applications, particularly in space power systems such as aerospace and satellite platforms, owing to its ultra-wide bandgap and high critical breakdown field. However, the Conventional Ga2O3 MOSFET (C-MOSFET) exhibits significant drawbacks when operating in space radiation environments. Under off-state conditions, the electric field distribution within the channel region is highly concentrated, particularly at the gate edge, where localized strong electric fields form. When a high-energy heavy ion strikes the device, a large number of electron-hole pairs are generated along the ion track. Under the influence of the strong electric field, these carriers undergo multiplication effects, causing the drain current to surge dramatically and fail to recover, ultimately leading to irreversible Single-Event Burnout (SEB) even at relatively low drain biases. This phenomenon represents one of the primary failure modes for power devices in space applications, severely limiting the reliable deployment of Ga2O3 MOSFETs in harsh radiation environments. Furthermore, the difficulty in achieving reliable and efficient P-type doping in Ga2O3 inherently limits the application of conventional radiation-hardening techniques such as junction termination extensions and junction isolation in Ga2O3 devices. The difficulty in achieving reliable and efficient P-type doping in Ga2O3 makes ionized charges more prone to accumulation in sensitive regions, further exacerbating the device’s susceptibility to Single-Event Effects (SEE). Meanwhile, the extremely low thermal conductivity of Ga2O3 causes Joule heat generated by transient currents to accumulate locally without effective dissipation. Within an extremely short time after heavy-ion incidence, heat concentrates in a microscopic region, forming localized hot spots that significantly increase the risk of thermal-induced burnout. To address these issues, existing hardening approaches such as field plates and dielectric layer optimization provide certain improvements in device robustness, yet research on the application of heterojunction structures for radiation hardening in Ga2O3 MOSFETs remains relatively limited, and systematic hardening solutions have yet to be established. While field plates can alleviate the peak electric field at the gate edge, their capability to dissipate transient carriers generated by heavy-ion incidence is limited. Dielectric layer optimization primarily improves the reliability of the gate dielectric but offers weak modulation of the internal electric field within the channel. To address these issues, this paper proposes a radiation-hardened Ga2O3 MOSFET featuring a NiO heterojunction and Comb-Shaped Gate (CSG) column structure, which optimizes the electric field distribution within the channel region, alleviates the electric field crowding effect at the conventional gate edge, and significantly enhances the device’s SEB robustness, providing an effective solution for Ga2O3 power devices in harsh radiation environments. Methods TCAD simulations are employed to evaluate the electrical characteristics and SEB performance of the proposed CSG-MOSFET, in comparison with the C-MOSFET. A range of physical models is incorporated in the simulations, including high-field mobility saturation, Shockley-Read-Hall and Auger recombination, impact ionization, and heavy-ion incidence. Based on the charge compensation mechanism in the space charge region of a PN junction, the proposed heterojunction structure leverages the depletion region formed between the P-type NiO layer and the N-type Ga2O3 channel to achieve effective modulation of the electric field distribution. The heterojunction utilizes the extension of the depletion region at the interface to create a barrier area within the channel, thereby optimizing the internal field profile and enhancing the device’s robustness against SEB. Furthermore, the CSG columns, in conjunction with the extended gate field plate, reconfigure the location of the peak electric field away from the conventional gate edge, alleviating local field concentration and improving device reliability under high-voltage and radiation-hard environments. Results and Discussions Simulation results show that compared to the C-MOSFET, the proposed CSG-MOSFET significantly enhances SEB tolerance. The SEB threshold voltage (VSEB) increases from 240 V to 2280 V, and the Breakdown Voltage (BV) improves from 2000 V to3500 V, while the specific on-resistance is reduced. Consequently, the Baliga figure of merit and the SEB-based figure of merit are dramatically improved. The NiO heterojunction and CSG columns effectively modulate the electric field distribution, relocating the peak field from the gate edge to the gate column edge and alleviating local field concentration, thereby significantly improving radiation hardness.Conclusions In this paper, a novel radiation-hardened Ga2O3 MOSFET design featuring a NiO heterojunction and CSG column structure is proposed through TCAD simulation. The proposed structure significantly enhances SEB tolerance. The VSEB and BV are substantially increased compared to the C-MOSFET, demonstrating superior blocking capability. Due to the charge compensation effect between the P-type NiO layer and the N-type Ga2O3 channel, the heterojunction forms an extended depletion region that effectively modulates the electric field distribution within the channel. This modulation alleviates the electric field crowding effect at the conventional gate edge. Furthermore, the CSG columns, in conjunction with the extended gate field plate, actively relocate the peak electric field from the gate edge to the outermost gate column edge. This electric field reconfiguration reduces carrier multiplication effects upon heavy-ion incidence, thereby effectively suppressing SEB. The specific on-resistance is also reduced, leading to improved Baliga figure of merit and SEB-based figure of merit. These advantages make the proposed CSG-MOSFET a promising candidate for power electronics applications in harsh radiation environments such as aerospace and satellite platforms. -
Key words:
- Ga2O3 MOSFET /
- radiation hardening /
- comb-shaped gate pillar
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表 1 所有器件的主要参数
器件参数 数值 N型Ga2O3沟道掺杂浓度 5×1017 cm–3 N+区掺杂浓度 1×1019 cm–3 N+区厚度 50 nm P-NiO区厚度 80 nm P-NiO区长度 (L) Variable P-NiO区掺杂浓度(NA) Variable P++区厚度 10 nm P++区掺杂浓度 1×1019 cm–3 
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表 2 所有器件的主要电学特性参数(L=8 μm，NA=1e16 cm–3)
器件特性 C-MOSFET SCSG-MOSFET DCSG-MOSFET TCSG-MOSFET Vth(V) –20 –20 –20 –20 Ron,sp(mΩ/cm2) 39.6 31.4 31.4 31.4 BV(V) 2000 3200 3500 2300 VSEB(V) 240 1970 2280 1260 BFOM(BV2/Ron,sp) 0.1 GW/cm2 0.33 GW/cm2 0.39 GW/cm2 0.17 GW/cm2 BFOM(VSEB2/Ron,sp) 0.001 GW/cm2 0.12 GW/cm2 0.17 GW/cm2 0.05 GW/cm2
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