GaAs,GaP,InP,GaInAs,GaInPAs晶体表面碳污染的去除
REMOVING OF THE CARBON CONTAMINATION FROM GaAs, GaP, InP, GaInAs AND GaInPAs SURFACES
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摘要: 本文以UV/O3法去除GaAs,GaP,InP,GaInAs,GaInPAs晶体表面碳的污染,实验给出不同的结果并给予解释。Abstract: The different results of removing the carbon contamination with UV/O3from the GaAs, GaP, InP, GaInAs and GaInPAs surfaces are given.
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J. J. Uebbing, J.Appl. Phys., 2(1970), 41.[2]谈凯声等,电子科学学刊,8(1986),155-157. -
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