长产生寿命的快速测量方法
RAPID DETERMINATION OF LONG GENERATION LIFETIME
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摘要: 本文提出了线性电压扫描下长产生寿命的快速测量方法。该法具有不需使C-t瞬态曲线达到饱和、数据处理简单、且不需知道样品的掺杂浓度等优点。
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关键词:
- 半导体; 产生寿命
Abstract: A method for rapidly determining long generation lifetime under linear voltage sweep was presented. The C-t transient curve needs not to reach saturation. The data processing is simple. Furthermore, it needs not to know the sample s impurity density. -
Pierret R F. A linear-sweep MOS-C technique for determining minority carrier lifetimes. IEEE Trans. on Electron Devices, 1972, ED-19(7): 869-873.[2]包宗明,苏九令.MOs电容法调硅的产生寿命和表面产生速度.物理学报,1980, 29(6): 693-697.[3]张秀森.饱和电容法快速确定体产生寿命和表面产生速度.半导体学报,1982, 3(2): 102-106.[4]张秀淼,丁扣宝.一种可用于直接计算产生寿命的产生区宽度模型.电子学报,1993,21(5): 43-46. -
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