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多层介质中通孔结构准静态电容参数的提取

宋犇 洪伟

宋犇, 洪伟. 多层介质中通孔结构准静态电容参数的提取[J]. 电子与信息学报, 1998, 20(1): 109-113.
引用本文: 宋犇, 洪伟. 多层介质中通孔结构准静态电容参数的提取[J]. 电子与信息学报, 1998, 20(1): 109-113.
Song Ben, Hong Wei. CAPACITANCE EXTRACTION OF THE VIA HOLE STRUCTURE EMBEDDED IN THE MULTILAYERED DIELECTRIC MEDIA[J]. Journal of Electronics & Information Technology, 1998, 20(1): 109-113.
Citation: Song Ben, Hong Wei. CAPACITANCE EXTRACTION OF THE VIA HOLE STRUCTURE EMBEDDED IN THE MULTILAYERED DIELECTRIC MEDIA[J]. Journal of Electronics & Information Technology, 1998, 20(1): 109-113.

多层介质中通孔结构准静态电容参数的提取

CAPACITANCE EXTRACTION OF THE VIA HOLE STRUCTURE EMBEDDED IN THE MULTILAYERED DIELECTRIC MEDIA

  • 摘要: 本文采用维数缩减技术(DRT)提取了多层介质中通孔结构的准静态电容参数。由于该方法充分利用了集成电路结构分层性的特点,从而可以很方便地处理任意的介质层数和结构参数,而仅需很少的计算时间和内存.文中的计算结果与Ansoft软件结果符合较好。
  • Wang T, Mautz J R, Harrington R F. The excess capacitance of a microstrip via in a dielectric substrate, IEEE Trans on CAD, 1990, CAD-9(1): 48-56.[2]Wang T, Harrington R, FMautz J R. Quasistatic analysis of a microstrip through a hole in ground plane, IEEE Trans. on MTT, 1988, MTT-36(6): 1008-1013.[3]KOP P, De Zutter D. Capacitance of a circular symmetric model of a via hole including finite ground plane thickness. IEEE Trans. on MTT, 1991, MTT-39(7): 1229-1234.[4]Mathis A W, Butler C M. Capacitance of circular symmetric via for microstrip transmission line, IEEE Proc. -H, 1994, 141(8): 265-271.[5]Faton Tefiku, Eidichi Yamashita. Efficient method for the capacitance calculation of circularly symmetric via in mutilayered media, IEEE Microwave and Guided Wave Letters, 1995, 5(9): 305-307.[6]Zhenhai Zhu, Wei Hong, et al. Electromagnetic modeling and transient simulation of interconnects in high speed VLSI, IEEE Multi-chip module conference MCMC 95, Santa Cruz, California: 1995.[7]朱震海,洪伟,陈忆元.集成电路中多导体传箱线的电磁参数提取和瞬态响应分析[J].电子学报.1996, 24(6):51-54[8]C Wei, Harrington R F, et al. Multiconductor transmission lines in multilayered dielectric media, IEEE Trans. on MTT, 1984, MTT-32(4): 439-450.
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出版历程
  • 收稿日期:  1996-04-24
  • 修回日期:  1997-02-04
  • 刊出日期:  1998-01-19

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