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Volume 43 Issue 6
Jun.  2021
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Li ZHANG, Di GAO, Shuo CHEN, Xudong LU, Zhanxi PANG, Chuangtao CHEN, Xunzhao YIN, Cheng ZHUO. An Energy Efficient Floating Point Computing Infrastructure Embedding Ferroelectric Field Effect Transistor Based Ternary Content Addressable Memories[J]. Journal of Electronics & Information Technology, 2021, 43(6): 1518-1524. doi: 10.11999/JEIT200979
Citation: Li ZHANG, Di GAO, Shuo CHEN, Xudong LU, Zhanxi PANG, Chuangtao CHEN, Xunzhao YIN, Cheng ZHUO. An Energy Efficient Floating Point Computing Infrastructure Embedding Ferroelectric Field Effect Transistor Based Ternary Content Addressable Memories[J]. Journal of Electronics & Information Technology, 2021, 43(6): 1518-1524. doi: 10.11999/JEIT200979

An Energy Efficient Floating Point Computing Infrastructure Embedding Ferroelectric Field Effect Transistor Based Ternary Content Addressable Memories

doi: 10.11999/JEIT200979
Funds:  The National Natural Science Foundation of China(61974133, 62034007), Zhejiang Provincial Key R&D program(2020C01052)
  • Received Date: 2020-11-18
  • Rev Recd Date: 2021-04-19
  • Available Online: 2021-05-07
  • Publish Date: 2021-06-18
  • With the growing abundance of data-intensive applications, memory wall has become a bottleneck to computing efficiency. A novel Floating Point (FP) computing infrastructure that embeds Ferroelectric Field Effect Transistor (FeFET) based Ternary Content Addressable Memories (TCAMs) for energy efficient computing is proposed. With an ultra-dense TCAM implementation following the designed guidelines, the infrastructure can replace unnecessary Float Point Unit (FPU) executions with more efficient TCAM searching, thereby saving the overall energy consumption. Thanks to the proposed execution flow, the infrastructure can achieve up to 33% energy saving compared to regular FPUs.
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