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Volume 11 Issue 4
Jul.  1989
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Zhen Jiang, Feng Yaolan. A NEW METHOD FOR DETERMINATION OF ENERGY GAP AND MINORITY-CARRIER RECOMBINATION LIFETIME IN HIGHLY DOPED EMITTER[J]. Journal of Electronics & Information Technology, 1989, 11(4): 439-443.
Citation: Zhen Jiang, Feng Yaolan. A NEW METHOD FOR DETERMINATION OF ENERGY GAP AND MINORITY-CARRIER RECOMBINATION LIFETIME IN HIGHLY DOPED EMITTER[J]. Journal of Electronics & Information Technology, 1989, 11(4): 439-443.

A NEW METHOD FOR DETERMINATION OF ENERGY GAP AND MINORITY-CARRIER RECOMBINATION LIFETIME IN HIGHLY DOPED EMITTER

  • Received Date: 1987-07-17
  • Rev Recd Date: 1988-03-31
  • Publish Date: 1989-07-19
  • Energy gap and minority-carrier recombination lifetime are important physical parameters in the emitter of silicon transistor. Using temperature characteristics obtained from the reverse diffusion current of p-n junction and by means of linear extrapolation, a new method for determination of the energy gap at 0K is presented. Based on the carrier Fermi-Dirac statistic distribution, a method for determination of minority-carrier recombination lifetime in highly doped emitter is presented. This test method is simple and can be used in practice.
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  • J. W. Slotboosn, et al., Solid-State Electron., 19(1976), 857-862.[2]G. E. Possin, et al., IEEE Trans. on ED, ED-27(1980), 983-990.[3]N. D. Arora, et al., Appl. Phys. Lett., 37(1980), 325-327.[4]D. J. Roulston, et al., IEEE Trans. on ED, ED-29(1982), 284-291.[5]C. H. Henry, et al., Phys. Rev., B15(1977), 989-1016.[6]N. D. Arora, et al., IEEE Trans. on ED, ED-29(1982), 292-295.[7]J. Dziemior, et al., Appl. Phys. Lett., 31(1977), 346-350.
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