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Volume 11 Issue 2
Mar.  1989
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Ma Jingshen, Zhang Yongkang, Han C. Hu. CALCIUM SURFACE DIFFUSION IN IMPREGNATED CATHODE ENHANCED BY OXYGEN[J]. Journal of Electronics & Information Technology, 1989, 11(2): 183-190.
Citation: Ma Jingshen, Zhang Yongkang, Han C. Hu. CALCIUM SURFACE DIFFUSION IN IMPREGNATED CATHODE ENHANCED BY OXYGEN[J]. Journal of Electronics & Information Technology, 1989, 11(2): 183-190.

CALCIUM SURFACE DIFFUSION IN IMPREGNATED CATHODE ENHANCED BY OXYGEN

  • Received Date: 1987-05-18
  • Rev Recd Date: 1988-09-01
  • Publish Date: 1989-03-19
  • The Ca behavior of an impregnated cathode is studied with enhanced diffusion of Ca to the cathode surface induced by low pressure oxygen, and the changes of surface composition are analysed with AES and the method of surface accumulation. The experimental results show that: (1) a significant part of Ca exist in metallic form in the near surface region of the active material in the pores of impregnated cathode ; (2) the diffusion rate of Ca to the surface is proportional to the O2 exposure quantity and the cathode temperature, the activation energy of Ca surface diffusion enhanced by O2 is about 1.34eV; (3) one of the reasons of emission decay under oxygen effect may be considered due to the increase of calcium oxide on the cathode surface, and the one of principal mechanisms of the seactivation is the high temperature cleaning process of the Ca by evaporation.
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  • Zhang Yonglrang,wang Yiman, et al., Studies of surface Behavior of Dispenser Cathodes Dispenser of Glass AES Apparatus, The Proc. of the Surface Science Symposium, Oct., 1981, XEROX Palo Alto Research Center, p. 83.[2]D. Brion, J. C. Tonnerce, A. M. Shroff, Appl, Surf. Sci., 16(1983),55.[3]C. E. Maloney, C.R. K. Marrian, G. Wyss, Appl. Surf. Sci., 2(1979),284.[4]B. C. Lamartine, W. V. Lampert, T. W. Haas, Appl. Surf. Sci., 8(1981),171.[5]张永康, 真空科学与技术, 4(1984), 350.[6]张永康, 电子管技术, 1975年, 第4-5期, 第103页.[7]张永康, 朱清元, 张贻英, 电子科学学刊, 9(1987), 42.[8]张永康等, 真空科学与技术, 2(1981), 61.[9]D. Gupta, R. Campbell, P. S. Ho, Thin Films--Interdiffusion and Reaction, Ed. by J. M. Poate, K. N. Tu, J. W. Mayer, 1978,(张永康译, 薄膜的相互扩散和反应, 1983年11月, 国防工业出版社, 第7章, p. 153.[10]张永康, 王亦曼, 庞世瑾, 真空物理与技术及其在电子器件中的应用,胡汉泉, 王迁主编,下册,第十一章,国防工业出版社, 1985年, 4月, p.535.[11]A. K. Sinha, J. M. Poate, 文献[9]一书中的第11章, p.410.[12]G. A. Haas, A. Shih, R. E. Thomas, Appl. Saurf. Sci., 2(1979), 293.
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