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Volume 20 Issue 6
Nov.  1998
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Niu Wencheng, Sun Xuezhu, Sun Jie, Zhang Songmin, Yang Dongmin, Liu Zhigang, Su Lin, Wu Yuansheng, Zhang Fuhai. STUDY ON PARALLEL EIS TYPE LIGHT ADDRESSABLE SEMICONDUCTOR HUMOR ANALYSIS SENSOR[J]. Journal of Electronics & Information Technology, 1998, 20(6): 815-820.
Citation: Niu Wencheng, Sun Xuezhu, Sun Jie, Zhang Songmin, Yang Dongmin, Liu Zhigang, Su Lin, Wu Yuansheng, Zhang Fuhai. STUDY ON PARALLEL EIS TYPE LIGHT ADDRESSABLE SEMICONDUCTOR HUMOR ANALYSIS SENSOR[J]. Journal of Electronics & Information Technology, 1998, 20(6): 815-820.

STUDY ON PARALLEL EIS TYPE LIGHT ADDRESSABLE SEMICONDUCTOR HUMOR ANALYSIS SENSOR

  • Received Date: 1996-08-28
  • Rev Recd Date: 1998-02-18
  • Publish Date: 1998-11-19
  • This papet stuides parallel EIS type light addressable semiconductor humor analysis sensor based on light addressable potentiometric sensor.The effects of the basis voltage,light modulation frequencies and light radiation power on photovoltage for the sensor with backside illumination are studied mainly.The optimized result of these parameters is given.Good response characteristics were obtained when it was used in determination of the pH(1-10pH),pO2(0.9-10ppm) and concentration of glucose (10-5~10-2M) in sample liquid.
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  • Hafeman D G, Parce J W, Mcconnell H W. Light addressable potentiometric sensor for biochemical system[J].Science.1988,240(4856):1182-1185[2]Adami M, Sartore M, Baldini E, Rossi A, Nicolini C. New measuring principle for LAPS devices[J].Sensors and Actuators B.1992, 9(1):25-31[3]Sartors M, Adami M, Nicolini C, Bousse L, Mostarshed S, Hafeman D. Minarity carrier diffussion length effects on light addressable potentiometric sensor (LAPS) device[J].Sensors and Actuators A.1992, 32(1/3):431-436[4]Yoshitaka Ito, Kinshiro Morimoto, Yoshihiro Tsunoda. Light- addressable potentiometric (LAP) gas sensor[J].Sensors and Actuators B.1993, 13(1-3):348-350[5]牛文成,孙学珠,等.EIS型光寻址电位传感器及其对液体分析的研究.光学学报,1997, 17(12): 1312-1315.[6]又吉直子,三浦则雄,山添升.フツ化物イオン导电性固体电解质を用ぃた新しぃ酵素センサ-.bunseki kagaku,1990, 39(11): 741-747.[7]牛文成.LPCVD氮化硅膜的表面氧化对pH-ISFET特性影响的研究.半导体学报,1993, 14(5): 313-317.
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