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Volume 11 Issue 3
May  1989
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Wen Dianzhong. THEORETICAL ANALYSIS OF THE PRESSURE-MAGNETOELECTRIC EFFECT OF JFET[J]. Journal of Electronics & Information Technology, 1989, 11(3): 275-283.
Citation: Wen Dianzhong. THEORETICAL ANALYSIS OF THE PRESSURE-MAGNETOELECTRIC EFFECT OF JFET[J]. Journal of Electronics & Information Technology, 1989, 11(3): 275-283.

THEORETICAL ANALYSIS OF THE PRESSURE-MAGNETOELECTRIC EFFECT OF JFET

  • Received Date: 1987-11-22
  • Rev Recd Date: 1988-08-26
  • Publish Date: 1989-05-19
  • The pressure-magnetoelectric effect of JFET is discussed by using standard relaxation techniques. A theoretical evaluation of the pressure sensitivity and Hall sensitivity of the n-channel silicon JFET with various geometries (W/L), gate voltages (VGS) and drain voltages (VDS) is made. The results show that when P0,B0, the current-pressure sensitivity is about 2.5%cm2/N, supposing W/L = 1/2-1. A junction field effect-pressure sensor with high stability and low noise is designed.
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  • M. Esashi, et al., Sensors and Actrsators, 4(1983), 537-544.[2]K .Suzuki et al., IEEE Trans. on ED, ED-34 (1987) 6, 1360-1366.[3]G. R. Mohan Rao, W. N. Carr, Solid-State Elect., 16(1973), 483-485.[4]R. S. Hemert, Solid-State Elect., 17(1974), 1039-1042.[5]阮英超,半导体学报,1(1980)2,107-120.[6]中科院沈阳计算技术研究所编,电子计算机常用算法,科学出版社,1976.[7]G. E. Forsythe, W. R. Wasow, Finite-Difference Methods for Partial Differential Equations.New York, Wiley, 1960. [8] 温殿忠,黄得星,黑龙江大学学报,1985年,第1期,第47-52页.[8]温殿忠,传感器技术,1988年,第1期,第35-38页.[9]温殿忠等,力敏传感器设计与研制学术论文集,1987, 78-84.[10]南京航空学院,北京航空学院合编,传感器原理,国防工业出版社,1983年, 第241-247页.
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