TRANSCONDUCTANCE AND DRAIN CONDUCTANCE OF DUAL-GATE FETs

The transconductances (gm1s,gm2s) and drain conductance (gds) of dual-gate FETs are evaluated by takinj; a dual-gate PET as a four-polar device based on current continuity and voltage conservation. This analytic method may be suitable for any kind of dual-gate FETs. The expressions of gm1s, gm2s, gds are quite clear in conception. The formulas set up the relations between single-gate FETs and dual-gate FETs, and lead to a special coupling idea of dual-gate devices. For the single-gate FET s model selected, there is a good agreement between calculated and experimental values of gm1s, gm2s and gds.