Fang Xizeng, Song Wenmiao. COMPUTER-AIDED ANALYSIS OF DOUBLE-DRIFT-REGION IMP ATT DIODE[J]. Journal of Electronics & Information Technology, 1986, 8(6): 416-422.
Citation:
Fang Xizeng, Song Wenmiao. COMPUTER-AIDED ANALYSIS OF DOUBLE-DRIFT-REGION IMP ATT DIODE[J]. Journal of Electronics & Information Technology, 1986, 8(6): 416-422.
Fang Xizeng, Song Wenmiao. COMPUTER-AIDED ANALYSIS OF DOUBLE-DRIFT-REGION IMP ATT DIODE[J]. Journal of Electronics & Information Technology, 1986, 8(6): 416-422.
Citation:
Fang Xizeng, Song Wenmiao. COMPUTER-AIDED ANALYSIS OF DOUBLE-DRIFT-REGION IMP ATT DIODE[J]. Journal of Electronics & Information Technology, 1986, 8(6): 416-422.
The results calculated by computer for the double-drift-region IMPATT diode on 3 mm waveband are reported. A comparison between single-drift and double-drift diodes is presented. The advantage of double-drift devices in respect to power output and efficiency is given. At the same time, effects of doping profile, current density and RF voltage on the performences of these devices are investigated. The theoretical data for design of double-drift IMPATT oscillator and amplifier on 8 mm waveband is also given.
D. L. Scharfetter,W.J. Evans and R. L. Johnston, Proc. IEEE, 58(1970), 1131-3.[2]W. N. Grant, Solid State Elect., 16(1973), 1189-1203.[3]R. A. Gibilin, E. F. Scherer and R. L. Wierich, IEEE Trans. on ED, ED-20(1973), 404-418.[4]W. E. Schroeder and G. I. Haddad, Proc. IEEE, 61(1973), 153-182.[5]宋文淼,方希曾,电子科学学刊, 6(1984), 400-408.
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