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Volume 11 Issue 3
May  1989
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Zhang Guicheng Wu Zheng Chen Ziyao Zhou Binglin. STUDY OF DEEP LEVELS IN Ga_(1-x)AlxAs/GaAs DH LEDs[J]. Journal of Electronics & Information Technology, 1989, 11(3): 333-336.
Citation: Zhang Guicheng Wu Zheng Chen Ziyao Zhou Binglin. STUDY OF DEEP LEVELS IN Ga_(1-x)AlxAs/GaAs DH LEDs[J]. Journal of Electronics & Information Technology, 1989, 11(3): 333-336.

STUDY OF DEEP LEVELS IN Ga_(1-x)AlxAs/GaAs DH LEDs

  • Received Date: 1987-04-15
  • Rev Recd Date: 1987-09-14
  • Publish Date: 1989-05-19
  • Deep levels in Ga1-xAlxAs/GaAs double-heterojunction LEDs have been studied by DLTS. The Ga1-xAlxAs DH material was grown by LPE technique. The dark deitcts are ob-jerved with an infrared line scanner. The effect of the oxygen contamination on the deep levels in Si-doped active layer is found. The activation energy EC-ED0.29 eV. The DSD are sometimes generated in the emitting area. It did not related to the deep levels obviously.
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