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Volume 13 Issue 5
Sep.  1991
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Zhang Weilian, Xu Yuesheng, Li Yangxian. THE INTRINSIC GETTERING EFFECT OF NTDCZSI[J]. Journal of Electronics & Information Technology, 1991, 13(5): 556-560.
Citation: Zhang Weilian, Xu Yuesheng, Li Yangxian. THE INTRINSIC GETTERING EFFECT OF NTDCZSI[J]. Journal of Electronics & Information Technology, 1991, 13(5): 556-560.

THE INTRINSIC GETTERING EFFECT OF NTDCZSI

  • Received Date: 1990-02-26
  • Rev Recd Date: 1990-06-27
  • Publish Date: 1991-09-19
  • The mechanism cf intrinsc gettering (IG) effecr for Neutron Trans-mutation Doped Czochralski Silicon (NTDCZSI) differs from chat of Czochralski Silicon (CZSi), and it results from the interaction between irradition defets and in-terstitial oxygen. Annealing at 1100℃ for 4h, the intrinsic gettering of NTDCZSi can be performed.
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  • T. Y. Tan, et al., Appl. Phys. Lett, 30(1977), 175.[2]J. G. Wilkes, J. Crystal. Growth, 65(1983), 214.[3]T. M. Brown, Semiconductor International, 5(1987), 233.[4]S. M. Hu, Appl. Phys. Lett, 53(1977), 31.[5]C. A. Londos, Jpn. J. Appl. Phys., 27(1982), 2089.[6]V. V. Voronkov, J. Crystal Growth, 59(1982), 625.[7]Л.С.斯米尔诺夫著,王正元等译,半导体的核反应方法掺杂,科学出版社,1986年,第108页.[8][8][9]曹国深,半导体硅文集,国际硅材料学术会议专刊,上海有色金属研究所出版,1988年,第3页.[10]张维连等,河北工学院学报,18(1989),33.[11]H. Harada, et al., Semiconductor Silicon, H. R. Huff, T. Abe, and B. Kolbesen, Editors, Plenum, The Flew trochem. Soc., Softbound, Proceeding Series, Pennington, NJ, (1986).[12]F. Shimura, et al., J. Electrochem. Soc, 5(1982), 1064.[13]张维连,半导体技术,5(1988),1.
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